Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devices

Abstract

Fabrication errors pose significant challenges on silicon photonics, promoting postfabrication trimming technologies to ensure device performance. Conventional approaches involve multiple trimming and characterization steps, impacting overall fabrication complexity. Here we demonstrate a highly accurate trimming method combining laser annealing of germanium implanted silicon waveguide and real-time monitoring of device performance. Direct feedback of the trimming process is facilitated by a differential spectroscopic technique based on photomodulation. The resonant wavelength trimming accuracy is better than 0.15 nm for ring resonators with 20-μm radius. We also realize operating point trimming of Mach-Zehnder interferometers with germanium implanted arms.
A phase shift of 1.2π is achieved by annealing a 7-μm implanted segment.

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