Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath
Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath
The electrodeposition of germanium antimony telluride (GST) alloys from a single non-aqueous plating bath based on tetrabutylammonium chlorometallate precursors is presented. The system provides a case-study for plating bath optimization in order to produce complex functional materials. GST deposits in the amorphous phase and the film composition and morphology can be readily adjusted by tuning the three precursor concentrations and the electrodeposition potential. Adjustment of the precursor concentrations allows the preparation of deposits ranging from the binaries (GeSb, GeTe, Sb2Te3) to ternaries with a wide range of compositions, including the standard Ge2Sb2Te5 composition – more commonly known as GST-225 – which is widely used in the solid state memory industry.
In this paper we present a detailed study discussing the complex interplay between the deposition of germanium, antimony and tellurium and how adjusting the concentrations of their chlorometallates allows control over the composition and also the morphology of the deposits. We also highlight the benefits that arise from the wide separation in the deposition potentials for the three precursors, and in particular the ability to control the composition through modulation of the deposition potential.
D557-D567
Kissling, Gabriela
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Huang, Ruomeng
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Jolleys, Andrew
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Benjamin, Sophie L
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Hector, Andrew L.
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Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Levason, William
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De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jolleys, Andrew
29e25ac4-2ff1-4267-8278-a433a94d5c6f
Benjamin, Sophie L
3efd7555-c2e0-4330-a289-681bd13700df
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Kissling, Gabriela, Huang, Ruomeng, Jolleys, Andrew, Benjamin, Sophie L, Hector, Andrew L., Reid, Gillian, Levason, William, De Groot, Cornelis and Bartlett, Philip N.
(2018)
Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath.
Journal of the Electrochemical Society, 165 (11), .
(doi:10.1149/2.0981811jes).
Abstract
The electrodeposition of germanium antimony telluride (GST) alloys from a single non-aqueous plating bath based on tetrabutylammonium chlorometallate precursors is presented. The system provides a case-study for plating bath optimization in order to produce complex functional materials. GST deposits in the amorphous phase and the film composition and morphology can be readily adjusted by tuning the three precursor concentrations and the electrodeposition potential. Adjustment of the precursor concentrations allows the preparation of deposits ranging from the binaries (GeSb, GeTe, Sb2Te3) to ternaries with a wide range of compositions, including the standard Ge2Sb2Te5 composition – more commonly known as GST-225 – which is widely used in the solid state memory industry.
In this paper we present a detailed study discussing the complex interplay between the deposition of germanium, antimony and tellurium and how adjusting the concentrations of their chlorometallates allows control over the composition and also the morphology of the deposits. We also highlight the benefits that arise from the wide separation in the deposition potentials for the three precursors, and in particular the ability to control the composition through modulation of the deposition potential.
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Submitted date: 2018
e-pub ahead of print date: 31 August 2018
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Local EPrints ID: 423246
URI: http://eprints.soton.ac.uk/id/eprint/423246
ISSN: 0013-4651
PURE UUID: d3855a2c-7f3a-4957-a5ff-a60d14d860b2
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Date deposited: 19 Sep 2018 16:30
Last modified: 16 Mar 2024 04:10
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Author:
Gabriela Kissling
Author:
Ruomeng Huang
Author:
Andrew Jolleys
Author:
Sophie L Benjamin
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