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Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath

Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath
Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath
The electrodeposition of germanium antimony telluride (GST) alloys from a single non-aqueous plating bath based on tetrabutylammonium chlorometallate precursors is presented. The system provides a case-study for plating bath optimization in order to produce complex functional materials. GST deposits in the amorphous phase and the film composition and morphology can be readily adjusted by tuning the three precursor concentrations and the electrodeposition potential. Adjustment of the precursor concentrations allows the preparation of deposits ranging from the binaries (GeSb, GeTe, Sb2Te3) to ternaries with a wide range of compositions, including the standard Ge2Sb2Te5 composition – more commonly known as GST-225 – which is widely used in the solid state memory industry.

In this paper we present a detailed study discussing the complex interplay between the deposition of germanium, antimony and tellurium and how adjusting the concentrations of their chlorometallates allows control over the composition and also the morphology of the deposits. We also highlight the benefits that arise from the wide separation in the deposition potentials for the three precursors, and in particular the ability to control the composition through modulation of the deposition potential.
0013-4651
D557-D567
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jolleys, Andrew
29e25ac4-2ff1-4267-8278-a433a94d5c6f
Benjamin, Sophie L
3efd7555-c2e0-4330-a289-681bd13700df
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jolleys, Andrew
29e25ac4-2ff1-4267-8278-a433a94d5c6f
Benjamin, Sophie L
3efd7555-c2e0-4330-a289-681bd13700df
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075

Kissling, Gabriela, Huang, Ruomeng, Jolleys, Andrew, Benjamin, Sophie L, Hector, Andrew L., Reid, Gillian, Levason, William, De Groot, Cornelis and Bartlett, Philip N. (2018) Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bath. Journal of the Electrochemical Society, 165 (11), D557-D567. (doi:10.1149/2.0981811jes).

Record type: Article

Abstract

The electrodeposition of germanium antimony telluride (GST) alloys from a single non-aqueous plating bath based on tetrabutylammonium chlorometallate precursors is presented. The system provides a case-study for plating bath optimization in order to produce complex functional materials. GST deposits in the amorphous phase and the film composition and morphology can be readily adjusted by tuning the three precursor concentrations and the electrodeposition potential. Adjustment of the precursor concentrations allows the preparation of deposits ranging from the binaries (GeSb, GeTe, Sb2Te3) to ternaries with a wide range of compositions, including the standard Ge2Sb2Te5 composition – more commonly known as GST-225 – which is widely used in the solid state memory industry.

In this paper we present a detailed study discussing the complex interplay between the deposition of germanium, antimony and tellurium and how adjusting the concentrations of their chlorometallates allows control over the composition and also the morphology of the deposits. We also highlight the benefits that arise from the wide separation in the deposition potentials for the three precursors, and in particular the ability to control the composition through modulation of the deposition potential.

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More information

Submitted date: 2018
e-pub ahead of print date: 31 August 2018

Identifiers

Local EPrints ID: 423246
URI: http://eprints.soton.ac.uk/id/eprint/423246
ISSN: 0013-4651
PURE UUID: d3855a2c-7f3a-4957-a5ff-a60d14d860b2
ORCID for Gabriela Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for Ruomeng Huang: ORCID iD orcid.org/0000-0003-1185-635X
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900

Catalogue record

Date deposited: 19 Sep 2018 16:30
Last modified: 16 Mar 2024 04:10

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Contributors

Author: Gabriela Kissling ORCID iD
Author: Ruomeng Huang ORCID iD
Author: Andrew Jolleys
Author: Sophie L Benjamin
Author: Gillian Reid ORCID iD
Author: William Levason ORCID iD

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