READ ME File For Data for 'Back-end-of-line a-SiOxCy:H dielectrics for resistive memory'

Dataset DOI: 10.5258/SOTON/D0641

ReadMe Author: Junqing Fan, University of Southampton

This dataset supports the publication:
AUTHORS:
Junqing Fan, School of Engineering, Soton, J.Fan@soton.ac.uk
Omesh Kapur, ECS, Soton, O.Kapur@soton.ac.uk
Ruomeng Huang, ECS, Soton, R.Huang@soton.ac.uk
Sean W. King, Logic Technology Development, Intel Corporation, Sean.King@intel.com
C.H. de Groot, ECS, Soton, chdg@soton.ac.uk
Liudi Jiang, School of Engineering, Soton, L.Jiang@soton.ac.uk

TITLE:Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
JOURNAL: AIP Advances
PAPER DOI: 10.1063/1.5046564


This dataset contains:

Dataset of figures in the paper

The figures are as follows:

Fig. 1  XPS survey spectra of a-SiOxCy:H films.
Fig. 2  (c) Ln(J)-|V|1/2 curves
Fig. 3  I-V characteristics of the (a) first forming and (b) subsequent switching cycles of W/a-SiOxCy:H/Cu RMs.
Fig. 4  (a) LRS and HRS currents in switching cycles of a W/a-SiO1.5C0.2:H/Cu RM. (b) Retention obtained from
W/a-SiOxCYH/Cu



Date of data collection: 2017-2018

Information about geographic location of data collection: University of Southampton, U.K.

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Date that the file was created: September 2018