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Two approximations for the geometric model of signal amplification in an electron-multiplying charge-coupled device detector

Two approximations for the geometric model of signal amplification in an electron-multiplying charge-coupled device detector
Two approximations for the geometric model of signal amplification in an electron-multiplying charge-coupled device detector

The extraction of information from images acquired under low light conditions represents a common task in diverse disciplines. In single molecule microscopy, for example, techniques for superresolution image reconstruction depend on the accurate estimation of the locations of individual particles from generally low light images. In order to estimate a quantity of interest with high accuracy, however, an appropriate model for the image data is needed. To this end, we previously introduced a data model for an image that is acquired using the electron-multiplying charge-coupled device (EMCCD) detector, a technology of choice for low light imaging due to its ability to amplify weak signals significantly above its readout noise floor. Specifically, we proposed the use of a geometrically multiplied branching process to model the EMCCD detector's stochastic signal amplification. Geometric multiplication, however, can be computationally expensive and challenging to work with analytically. We therefore describe here two approximations for geometric multiplication that can be used instead. The high gain approximation is appropriate when a high level of signal amplification is used, a scenario which corresponds to the typical usage of an EMCCD detector. It is an accurate approximation that is computationally more efficient, and can be used to perform maximum likelihood estimation on EMCCD image data. In contrast, the Gaussian approximation is applicable at all levels of signal amplification, but is only accurate when the initial signal to be amplified is relatively large. As we demonstrate, it can importantly facilitate the analysis of an information-theoretic quantity called the noise coefficient.

Branching process, electron multiplication, electron-multiplying charge-coupled device, geometric distribution
IEEE
Chao, Jerry
550e20b0-8365-42e3-a6fc-1048eb8c2e47
Ram, Sripad
559bd560-3817-4e53-8c7a-2f08e4518412
Ward, E. Sally
b31c0877-8abe-485f-b800-244a9d3cd6cc
Ober, Raimund J.
31f4d47f-fb49-44f5-8ff6-87fc4aff3d36
Chao, Jerry
550e20b0-8365-42e3-a6fc-1048eb8c2e47
Ram, Sripad
559bd560-3817-4e53-8c7a-2f08e4518412
Ward, E. Sally
b31c0877-8abe-485f-b800-244a9d3cd6cc
Ober, Raimund J.
31f4d47f-fb49-44f5-8ff6-87fc4aff3d36

Chao, Jerry, Ram, Sripad, Ward, E. Sally and Ober, Raimund J. (2013) Two approximations for the geometric model of signal amplification in an electron-multiplying charge-coupled device detector. In Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XX. vol. 8589, IEEE.. (doi:10.1117/12.2004621).

Record type: Conference or Workshop Item (Paper)

Abstract

The extraction of information from images acquired under low light conditions represents a common task in diverse disciplines. In single molecule microscopy, for example, techniques for superresolution image reconstruction depend on the accurate estimation of the locations of individual particles from generally low light images. In order to estimate a quantity of interest with high accuracy, however, an appropriate model for the image data is needed. To this end, we previously introduced a data model for an image that is acquired using the electron-multiplying charge-coupled device (EMCCD) detector, a technology of choice for low light imaging due to its ability to amplify weak signals significantly above its readout noise floor. Specifically, we proposed the use of a geometrically multiplied branching process to model the EMCCD detector's stochastic signal amplification. Geometric multiplication, however, can be computationally expensive and challenging to work with analytically. We therefore describe here two approximations for geometric multiplication that can be used instead. The high gain approximation is appropriate when a high level of signal amplification is used, a scenario which corresponds to the typical usage of an EMCCD detector. It is an accurate approximation that is computationally more efficient, and can be used to perform maximum likelihood estimation on EMCCD image data. In contrast, the Gaussian approximation is applicable at all levels of signal amplification, but is only accurate when the initial signal to be amplified is relatively large. As we demonstrate, it can importantly facilitate the analysis of an information-theoretic quantity called the noise coefficient.

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More information

Published date: 2013
Venue - Dates: Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XX, , San Francisco, CA, United States, 2013-02-05 - 2013-02-07
Keywords: Branching process, electron multiplication, electron-multiplying charge-coupled device, geometric distribution

Identifiers

Local EPrints ID: 423643
URI: http://eprints.soton.ac.uk/id/eprint/423643
PURE UUID: 311595cd-0bd1-411a-b918-900f2c182eab
ORCID for E. Sally Ward: ORCID iD orcid.org/0000-0003-3232-7238
ORCID for Raimund J. Ober: ORCID iD orcid.org/0000-0002-1290-7430

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Date deposited: 27 Sep 2018 16:30
Last modified: 16 Mar 2024 04:37

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Contributors

Author: Jerry Chao
Author: Sripad Ram
Author: E. Sally Ward ORCID iD
Author: Raimund J. Ober ORCID iD

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