Jelínek, M., Eason, Robert, Anderson, Andrew A., Grivas, Christos, Gill, Devinder S., Sonsky, J., Lančok, Ján, Hickey, Louise M.B., Vainos, N.A. and Hribek, P. (1997) Planar waveguide lasers of Ti:sapphire and Nd:YAG (YAP) grown by PLD. In, Kossowsky, R., Jelinek, Miroslav and Novak, Josef (eds.) Optical Resonators — Science and Engineering. (Nato Science Partnership Subseries: 3, 45) Springer Dordrecht, pp. 419-424.
Abstract
Introduction:
Passive and active planar waveguides belong to perspective components of integrated optics and optoelectronics for generation and processing of visible and near infrared signals and for the development of new generation of integrated optics technology in which sources. non-linear structures, detectors and electronics waveguides will be produced on a single substrate. Because of this reason planar and channel waveguide lasers are of great interest during the last several years.
Waveguide lasers have excellent properties as compared with conventional bulk lasers, such as low threshold operation due to the high pumping efficiency (particularly for transitions with large population in lower laser level [1]), output power and mode pattern stability. and easy coupling with other waveguide structure devices. The future of waveguide technology is placed in the construction of widely tunable laser operating at threshold low enough to allow the pumping by laser diodes.
Planar and channel waveguide lasers were successfully created by ion implantation, liquid phase epitaxy (LPE), diffusion, thermal bonding, proton exchange and recently also by pulsed laser deposition PLD). The layers exhibiting at present the lowest losses were created by LPE method.
One of the novel thin film technology, the PLD, has some advantages as stoichiometric deposition of even very complex materials, a high deposition rate. enhanced film crystallinity due to the presence of high energy particles in incoming plasma plume (light oriented or epitaxially films are grown) and the higher density in thin films than that of bulk material can be achieved. Basic experimental apparatus for laser thin film deposition consists of interaction chamber, a substrate holder with precise temperature control. and source material-target. Laser is usually located outside of the chamber.
Till now, the lasing in the following planar waveguide lasers, created by various techniques, was reached: Er:Ti:LiNbO3 [2,3], Nd:YAG [4,5,6.7,8,9,10,11,12,13], Yb:YAG [14,15,9], LiNdP4O12 [16], Tm:YAG [17], Ti:sapphire [18], Nd:MgO:LiNbO3 [19,20,21], Nd:YAP [22], Nd:GGG [23], Tm:germanate glass [24], Nd:LiTaO3 ;[25], Yb:Tl:LiNbO3 [1], Yb:Er:YAG [26]. TmY2SiO5 (27].
Recently the laser generation was obtained also in films created by meihod of PLD, as Nd:GGG grown on YAG substrate [28], and Ti:sapphire grown on sapphire [29].
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