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Planar waveguide lasers of Ti:sapphire and Nd:YAG (YAP) grown by PLD

Planar waveguide lasers of Ti:sapphire and Nd:YAG (YAP) grown by PLD
Planar waveguide lasers of Ti:sapphire and Nd:YAG (YAP) grown by PLD
Introduction:
Passive and active planar waveguides belong to perspective components of integrated optics and optoelectronics for generation and processing of visible and near infrared signals and for the development of new generation of integrated optics technology in which sources. non-linear structures, detectors and electronics waveguides will be produced on a single substrate. Because of this reason planar and channel waveguide lasers are of great interest during the last several years.
Waveguide lasers have excellent properties as compared with conventional bulk lasers, such as low threshold operation due to the high pumping efficiency (particularly for transitions with large population in lower laser level [1]), output power and mode pattern stability. and easy coupling with other waveguide structure devices. The future of waveguide technology is placed in the construction of widely tunable laser operating at threshold low enough to allow the pumping by laser diodes.
Planar and channel waveguide lasers were successfully created by ion implantation, liquid phase epitaxy (LPE), diffusion, thermal bonding, proton exchange and recently also by pulsed laser deposition PLD). The layers exhibiting at present the lowest losses were created by LPE method.
One of the novel thin film technology, the PLD, has some advantages as stoichiometric deposition of even very complex materials, a high deposition rate. enhanced film crystallinity due to the presence of high energy particles in incoming plasma plume (light oriented or epitaxially films are grown) and the higher density in thin films than that of bulk material can be achieved. Basic experimental apparatus for laser thin film deposition consists of interaction chamber, a substrate holder with precise temperature control. and source material-target. Laser is usually located outside of the chamber.
Till now, the lasing in the following planar waveguide lasers, created by various techniques, was reached: Er:Ti:LiNbO3 [2,3], Nd:YAG [4,5,6.7,8,9,10,11,12,13], Yb:YAG [14,15,9], LiNdP4O12 [16], Tm:YAG [17], Ti:sapphire [18], Nd:MgO:LiNbO3 [19,20,21], Nd:YAP [22], Nd:GGG [23], Tm:germanate glass [24], Nd:LiTaO3 ;[25], Yb:Tl:LiNbO3 [1], Yb:Er:YAG [26]. TmY2SiO5 (27].
Recently the laser generation was obtained also in films created by meihod of PLD, as Nd:GGG grown on YAG substrate [28], and Ti:sapphire grown on sapphire [29].
1388-6576
419-424
Springer Netherlands
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Eason, Robert
e38684c3-d18c-41b9-a4aa-def67283b020
Anderson, Andrew A.
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Grivas, Christos
7f564818-0ac0-4127-82a7-22e87ac35f1a
Gill, Devinder S.
789596f2-c7d9-49e9-8ffb-c1b35b4a0de8
Sonsky, J.
99dbbc92-69f3-4ae2-bc6b-504c20e24e29
Lančok, Ján
56be5ea4-d145-439e-9ae2-21f379cd588a
Hickey, Louise M.B.
e52aa43f-5ced-476a-9fae-c8205f2fd5a4
Vainos, N.A.
e4f22637-2f1c-4dec-af67-d059261dd5b2
Hribek, P.
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Kossowsky, R.
Jelinek, Miroslav
Novak, Josef
Jelínek, M.
058ae7ba-cd86-4f99-990e-2e8f78cd4484
Eason, Robert
e38684c3-d18c-41b9-a4aa-def67283b020
Anderson, Andrew A.
b7ad6a3d-3b13-4ae6-80a2-1f5052868810
Grivas, Christos
7f564818-0ac0-4127-82a7-22e87ac35f1a
Gill, Devinder S.
789596f2-c7d9-49e9-8ffb-c1b35b4a0de8
Sonsky, J.
99dbbc92-69f3-4ae2-bc6b-504c20e24e29
Lančok, Ján
56be5ea4-d145-439e-9ae2-21f379cd588a
Hickey, Louise M.B.
e52aa43f-5ced-476a-9fae-c8205f2fd5a4
Vainos, N.A.
e4f22637-2f1c-4dec-af67-d059261dd5b2
Hribek, P.
1bc0cd09-b540-482a-9f04-a603e7304e27
Kossowsky, R.
Jelinek, Miroslav
Novak, Josef

Jelínek, M., Eason, Robert, Anderson, Andrew A., Grivas, Christos, Gill, Devinder S., Sonsky, J., Lančok, Ján, Hickey, Louise M.B., Vainos, N.A. and Hribek, P. (1997) Planar waveguide lasers of Ti:sapphire and Nd:YAG (YAP) grown by PLD. In, Kossowsky, R., Jelinek, Miroslav and Novak, Josef (eds.) Optical Resonators — Science and Engineering. (Nato Science Partnership Subseries: 3, 45) Springer Netherlands, pp. 419-424.

Record type: Book Section

Abstract

Introduction:
Passive and active planar waveguides belong to perspective components of integrated optics and optoelectronics for generation and processing of visible and near infrared signals and for the development of new generation of integrated optics technology in which sources. non-linear structures, detectors and electronics waveguides will be produced on a single substrate. Because of this reason planar and channel waveguide lasers are of great interest during the last several years.
Waveguide lasers have excellent properties as compared with conventional bulk lasers, such as low threshold operation due to the high pumping efficiency (particularly for transitions with large population in lower laser level [1]), output power and mode pattern stability. and easy coupling with other waveguide structure devices. The future of waveguide technology is placed in the construction of widely tunable laser operating at threshold low enough to allow the pumping by laser diodes.
Planar and channel waveguide lasers were successfully created by ion implantation, liquid phase epitaxy (LPE), diffusion, thermal bonding, proton exchange and recently also by pulsed laser deposition PLD). The layers exhibiting at present the lowest losses were created by LPE method.
One of the novel thin film technology, the PLD, has some advantages as stoichiometric deposition of even very complex materials, a high deposition rate. enhanced film crystallinity due to the presence of high energy particles in incoming plasma plume (light oriented or epitaxially films are grown) and the higher density in thin films than that of bulk material can be achieved. Basic experimental apparatus for laser thin film deposition consists of interaction chamber, a substrate holder with precise temperature control. and source material-target. Laser is usually located outside of the chamber.
Till now, the lasing in the following planar waveguide lasers, created by various techniques, was reached: Er:Ti:LiNbO3 [2,3], Nd:YAG [4,5,6.7,8,9,10,11,12,13], Yb:YAG [14,15,9], LiNdP4O12 [16], Tm:YAG [17], Ti:sapphire [18], Nd:MgO:LiNbO3 [19,20,21], Nd:YAP [22], Nd:GGG [23], Tm:germanate glass [24], Nd:LiTaO3 ;[25], Yb:Tl:LiNbO3 [1], Yb:Er:YAG [26]. TmY2SiO5 (27].
Recently the laser generation was obtained also in films created by meihod of PLD, as Nd:GGG grown on YAG substrate [28], and Ti:sapphire grown on sapphire [29].

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Published date: 1997

Identifiers

Local EPrints ID: 423744
URI: https://eprints.soton.ac.uk/id/eprint/423744
ISSN: 1388-6576
PURE UUID: 8f88740c-2f4b-447e-aab1-05cc78041a77
ORCID for Robert Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 28 Sep 2018 16:30
Last modified: 14 Mar 2019 01:55

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