High throughput synthesis and screening of chalcogenide materials for data storage

Guerin, S., Hayden, B., Hewak, D.W., Purdy, G. and Simpson, R. (2005) High throughput synthesis and screening of chalcogenide materials for data storage At Singapore International Chemistry Conference 4. 08 - 10 Dec 2005. , 1 pp.


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The ability to store information through the phase change mechanism is a well established technology for optical data storage, with typically germanium antimony telluride based films forming the active layer of a phase change disc. However, the ever increasing need for greater storage densities, shorter write/erase, duration and longer archival time is driving interest beyond these established materials. A new thin high throughput thin film deposition method provides a well controlled route to the synthesis of a wide range of chalcogenide compositions through simultaneous deposition of the component elements. When combined with fast primary and secondary screening techniques, the amorphous / crystalline phase transition can be characterised across the ternary compositional space. When combined with a full high throughput characterisation of the phases using EDX and XRD, conductivity measurements and ellipsometric characterisation of the optical properties, a better understanding of the desired phenomena for phase change memory applications is accessible. Results of a high throughput study of the GeSbTe system are presented.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: Singapore International Chemistry Conference 4, 2005-12-08 - 2005-12-10
Related URLs:
ePrint ID: 42408
Date :
Date Event
Date Deposited: 12 Dec 2006
Last Modified: 16 Apr 2017 18:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/42408

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