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Light-induced structural transition and reflectivity of a silica-gallium interface

Light-induced structural transition and reflectivity of a silica-gallium interface
Light-induced structural transition and reflectivity of a silica-gallium interface
A broadband optical reflectometer with built-in thermal sample control was developed to study the linear properties of planar silica-gallium interfaces in the continuous range from 450 nm to 1650 nm with increasing and decreasing temperature in the range 12 °C to 36 °C, across the solid to melt phase transition. Transient pump-probe reflectivity measurements revealed the dynamics of a silica-gallium interface reflectivity change in the visible part of the spectrum for the first time. Reflectivity rise times of a few ps were observed and the accumulative nature of the reflectivity change with pump energy was seen. Recovery times of 1.2 µs just below melting were recorded for pump pulse duration of 0.4 µs. Thermal and non-thermal mechanisms of the reflectivity change have been identified and related to the properties of the interface.
Albanis, Vassilios
93793f17-0f6b-4f07-b126-4623f2091304
Albanis, Vassilios
93793f17-0f6b-4f07-b126-4623f2091304
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6

Albanis, Vassilios (2003) Light-induced structural transition and reflectivity of a silica-gallium interface. University of Southampton, Optoelectronics Research Centre, Doctoral Thesis, 159pp.

Record type: Thesis (Doctoral)

Abstract

A broadband optical reflectometer with built-in thermal sample control was developed to study the linear properties of planar silica-gallium interfaces in the continuous range from 450 nm to 1650 nm with increasing and decreasing temperature in the range 12 °C to 36 °C, across the solid to melt phase transition. Transient pump-probe reflectivity measurements revealed the dynamics of a silica-gallium interface reflectivity change in the visible part of the spectrum for the first time. Reflectivity rise times of a few ps were observed and the accumulative nature of the reflectivity change with pump energy was seen. Recovery times of 1.2 µs just below melting were recorded for pump pulse duration of 0.4 µs. Thermal and non-thermal mechanisms of the reflectivity change have been identified and related to the properties of the interface.

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More information

Published date: 2003
Additional Information: Publication No: 2000T
Organisations: University of Southampton, Optoelectronics Research Centre

Identifiers

Local EPrints ID: 42434
URI: https://eprints.soton.ac.uk/id/eprint/42434
PURE UUID: b48ca6ce-e0a5-4667-a9c5-fe375fcea5e1
ORCID for Nikolai Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

Catalogue record

Date deposited: 19 Apr 2007
Last modified: 14 Mar 2019 01:53

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