Ytterbium doped tantalum pentoxide nanowire waveguide lasers
Ytterbium doped tantalum pentoxide nanowire waveguide lasers
Ytterbium (Yb) has been widely studied in several host materials and device forms due to its broad gain bandwidth, long excited-state lifetime, and simple quasi-three energy level structure. Yb doped tantalum pentoxide (Yb:Ta2O5) waveguides are favorable for laser applications since Ta2O5 has promising optical properties including high refractive index (≈2.1), wide transmission spectrum (350 nm to 9 μm) and suitability to host rare-earth ions. In this work, a nanowire waveguide design with taper and coupler section was demonstrated. Thin Yb:Ta2O5 films were fabricated by plasma assisted reactive magnetron sputtering (PARMS) from high purity (99.999%) Ta metal and Yb metal targets at low temperature (< 70°C). The PARMS process allows Yb doping concentration to be easily adjusted, leading to a new flexible deposition method for not only Yb:Ta2O5 but other doped materials. Nanoscale waveguide fabrication processes of strip loaded and buried channel waveguides on SiO2 using electron beam lithography and inductively couple plasma reactive ion etching (RIE-ICP) were demonstrated and the first Yb:Ta2O5 anisotropic RIE-ICP etching process was developed. Buried channel waveguide in polymer fabricated by nano-imprint was also demonstrated, offering low-cost and mass production of nanoscale waveguide. A 6.7 mm long strip loaded Yb:Ta2O5 nanowire waveguide laser with 1.25 atomic percentage Yb doping concentration was demonstrated with a laser cavity formed of bare polished end facets only, with 12% Fresnel reflectivity. Single mode lasing was observed between 1015 nm and 1030 nm in strip loaded waveguides with nanowire of 400 nm width when end pumped by a 977 nm laser diode. The launched power threshold and the slope efficiency were measured to be ≈ 12 mW and ≈ 38%. The lasing wavelength of such waveguide can be switched by tuning the pump coupling position at the coupler section, implying a potential tuning mechanism.The results presented in this work demonstrate the capability of Yb:Ta2O5 for being a waveguide laser, show the great potential for being used in mass-producible, CMOS compatible integrated optical circuits.
University of Southampton
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
June 2017
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Charlton, Martin
fcf86ab0-8f34-411a-b576-4f684e51e274
Pearce, Stuart J
1d0ee7c5-8f72-4783-a034-9b2f67de3531
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Ye, Sheng
41d5b4a0-6d97-43a2-a1fa-7cdbbf5bc1cd
Yan, Xingzhao
(2017)
Ytterbium doped tantalum pentoxide nanowire waveguide lasers.
University of Southampton, Doctoral Thesis, 172pp.
Record type:
Thesis
(Doctoral)
Abstract
Ytterbium (Yb) has been widely studied in several host materials and device forms due to its broad gain bandwidth, long excited-state lifetime, and simple quasi-three energy level structure. Yb doped tantalum pentoxide (Yb:Ta2O5) waveguides are favorable for laser applications since Ta2O5 has promising optical properties including high refractive index (≈2.1), wide transmission spectrum (350 nm to 9 μm) and suitability to host rare-earth ions. In this work, a nanowire waveguide design with taper and coupler section was demonstrated. Thin Yb:Ta2O5 films were fabricated by plasma assisted reactive magnetron sputtering (PARMS) from high purity (99.999%) Ta metal and Yb metal targets at low temperature (< 70°C). The PARMS process allows Yb doping concentration to be easily adjusted, leading to a new flexible deposition method for not only Yb:Ta2O5 but other doped materials. Nanoscale waveguide fabrication processes of strip loaded and buried channel waveguides on SiO2 using electron beam lithography and inductively couple plasma reactive ion etching (RIE-ICP) were demonstrated and the first Yb:Ta2O5 anisotropic RIE-ICP etching process was developed. Buried channel waveguide in polymer fabricated by nano-imprint was also demonstrated, offering low-cost and mass production of nanoscale waveguide. A 6.7 mm long strip loaded Yb:Ta2O5 nanowire waveguide laser with 1.25 atomic percentage Yb doping concentration was demonstrated with a laser cavity formed of bare polished end facets only, with 12% Fresnel reflectivity. Single mode lasing was observed between 1015 nm and 1030 nm in strip loaded waveguides with nanowire of 400 nm width when end pumped by a 977 nm laser diode. The launched power threshold and the slope efficiency were measured to be ≈ 12 mW and ≈ 38%. The lasing wavelength of such waveguide can be switched by tuning the pump coupling position at the coupler section, implying a potential tuning mechanism.The results presented in this work demonstrate the capability of Yb:Ta2O5 for being a waveguide laser, show the great potential for being used in mass-producible, CMOS compatible integrated optical circuits.
Text
Final thesis
- Version of Record
More information
Published date: June 2017
Identifiers
Local EPrints ID: 424429
URI: http://eprints.soton.ac.uk/id/eprint/424429
PURE UUID: e433a694-cc1d-46a9-8758-09bc019f1d8d
Catalogue record
Date deposited: 05 Oct 2018 11:37
Last modified: 16 Mar 2024 07:02
Export record
Contributors
Author:
Xingzhao Yan
Thesis advisor:
Martin Charlton
Thesis advisor:
Stuart J Pearce
Thesis advisor:
Katrina Morgan
Thesis advisor:
Ruomeng Huang
Thesis advisor:
Sheng Ye
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics