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Temperature dependent polarity inversion in double-metal terahertz emitters

Temperature dependent polarity inversion in double-metal terahertz emitters
Temperature dependent polarity inversion in double-metal terahertz emitters
The temperature dependent polarity inversion in double-metal THz emitters was investigated. Double-metal emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.
0013-5194
991-993
Gow, P.C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
McBryde, D.
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Berry, S.A.
0f768f48-36c4-4599-8917-7aae657378a7
Apostolopoulos, V.
8a898740-4c71-4040-a577-9b9d70530b4d
Gow, P.C.
193394b1-fe2d-41de-a9aa-6de7e5925b18
McBryde, D.
f7bf01f5-a1b3-4873-9067-2d118d8dc714
Berry, S.A.
0f768f48-36c4-4599-8917-7aae657378a7
Apostolopoulos, V.
8a898740-4c71-4040-a577-9b9d70530b4d

Gow, P.C., McBryde, D., Berry, S.A. and Apostolopoulos, V. (2018) Temperature dependent polarity inversion in double-metal terahertz emitters. Electronics Letters, 54 (16), 991-993. (doi:10.1049/el.2018.0961).

Record type: Letter

Abstract

The temperature dependent polarity inversion in double-metal THz emitters was investigated. Double-metal emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.

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Temperature dependent polarity inversion in double-metal terahertz emitters - Accepted Manuscript
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Accepted/In Press date: 18 June 2018
e-pub ahead of print date: 2 July 2018
Published date: 9 August 2018
Learn more about Zepler Institute for Photonics and Nanoelectronics research Learn more about Physics & Astronomy research

Identifiers

Local EPrints ID: 424839
URI: http://eprints.soton.ac.uk/id/eprint/424839
DOI: doi:10.1049/el.2018.0961
ISSN: 0013-5194
PURE UUID: d56776f9-cd78-4fe8-b78e-aff50f1f1ddc
ORCID for P.C. Gow: ORCID iD orcid.org/0000-0002-3247-9082
ORCID for S.A. Berry: ORCID iD orcid.org/0000-0002-9538-8655
ORCID for V. Apostolopoulos: ORCID iD orcid.org/0000-0003-3733-2191

Catalogue record

Date deposited: 05 Oct 2018 11:49
Last modified: 16 Mar 2024 04:10

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Contributors

Author: P.C. Gow ORCID iD
Author: D. McBryde
Author: S.A. Berry ORCID iD
Author: V. Apostolopoulos ORCID iD

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