Quantum dipole effects in a silicon transistor under high electric fields

Abstract

Low dimensional strongly correlated electron systems exhibit a variety of exotic phenomena such as fractional quantum Hall effects, high-temperature superconductivity, and topological phase transitions. However, a problem in modern condensed-matter physics is the difficulty to compare theories with experiments, because of the absence of an ideal experimental system whose properties can be controlled in a systematic way. Here we show a state-of-the-art silicon technology can provide a platform to investigate a one-dimensional quantum system, where various theoretical predictions are available on the basis of mathematically rigid models. We have found unusual transport properties in a field-effect-transistor with a wide and short hole-channel under strong electric fields at low temperatures. By gate-induced doping in the transistor, we discovered new current plateaus and negative differential conductances against drain voltages. We have also found anomalous gate leakage currents which increases upon reducing temperatures and reducing the external electric fields. This provides evidence of the broken symmetry of quantum dipoles formed at the gate interface, which increases local electric fields coming from molecular mean-fields. We obtained phase diagrams of the field-induced phase transitions, which will be correlated with a one-dimensional quantum dipole model.

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Identifiers

ORCID for Shinichi Saito: orcid.org/0000-0003-1539-1182

ORCID for Fayong Liu: orcid.org/0000-0003-4443-9720

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