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Quantum dipole effects in a silicon transistor under high electric fields

Quantum dipole effects in a silicon transistor under high electric fields
Quantum dipole effects in a silicon transistor under high electric fields
Low dimensional strongly correlated electron systems exhibit a variety of exotic phenomena such as fractional quantum Hall effects, high-temperature superconductivity, and topological phase transitions. However, a problem in modern condensed-matter physics is the difficulty to compare theories with experiments, because of the absence of an ideal experimental system whose properties can be controlled in a systematic way. Here we show a state-of-the-art silicon technology can provide a platform to investigate a one-dimensional quantum system, where various theoretical predictions are available on the basis of mathematically rigid models. We have found unusual transport properties in a field-effect-transistor with a wide and short hole-channel under strong electric fields at low temperatures. By gate-induced doping in the transistor, we discovered new current plateaus and negative differential conductances against drain voltages. We have also found anomalous gate leakage currents which increases upon reducing temperatures and reducing the external electric fields. This provides evidence of the broken symmetry of quantum dipoles formed at the gate interface, which increases local electric fields coming from molecular mean-fields. We obtained phase diagrams of the field-induced phase transitions, which will be correlated with a one-dimensional quantum dipole model.
0031-9015
Saito, Shinichi
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Li, Zuo
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Yoshimoto, Hiroyuki
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Tomita, Isao
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Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Arimoto, Hideo
b88aab51-ad62-4127-9ca5-d86e3d714531
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad
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Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Kurihara, Sususu
e74ce397-8b68-4163-bec5-d25847d6ea8c
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Yoshimoto, Hiroyuki
4dc99648-221b-4822-9063-884e6163fab5
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Arimoto, Hideo
b88aab51-ad62-4127-9ca5-d86e3d714531
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Kurihara, Sususu
e74ce397-8b68-4163-bec5-d25847d6ea8c

Saito, Shinichi, Li, Zuo, Yoshimoto, Hiroyuki, Tomita, Isao, Tsuchiya, Yoshishige, Sasago, Yoshitaka, Arimoto, Hideo, Liu, Fayong, Husain, Muhammad, Hisamoto, Digh, Rutt, Harvey and Kurihara, Sususu (2018) Quantum dipole effects in a silicon transistor under high electric fields. Journal of the Physical Society of Japan. (doi:10.7566/JPSJ.87.094801).

Record type: Article

Abstract

Low dimensional strongly correlated electron systems exhibit a variety of exotic phenomena such as fractional quantum Hall effects, high-temperature superconductivity, and topological phase transitions. However, a problem in modern condensed-matter physics is the difficulty to compare theories with experiments, because of the absence of an ideal experimental system whose properties can be controlled in a systematic way. Here we show a state-of-the-art silicon technology can provide a platform to investigate a one-dimensional quantum system, where various theoretical predictions are available on the basis of mathematically rigid models. We have found unusual transport properties in a field-effect-transistor with a wide and short hole-channel under strong electric fields at low temperatures. By gate-induced doping in the transistor, we discovered new current plateaus and negative differential conductances against drain voltages. We have also found anomalous gate leakage currents which increases upon reducing temperatures and reducing the external electric fields. This provides evidence of the broken symmetry of quantum dipoles formed at the gate interface, which increases local electric fields coming from molecular mean-fields. We obtained phase diagrams of the field-induced phase transitions, which will be correlated with a one-dimensional quantum dipole model.

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More information

In preparation date: 9 May 2017
Accepted/In Press date: 10 July 2018
e-pub ahead of print date: 7 August 2018

Identifiers

Local EPrints ID: 424899
URI: http://eprints.soton.ac.uk/id/eprint/424899
ISSN: 0031-9015
PURE UUID: ec8cb5f4-1e2b-4a40-9f03-3de432d7479e
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720

Catalogue record

Date deposited: 05 Oct 2018 12:02
Last modified: 20 Jul 2019 05:08

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Contributors

Author: Shinichi Saito ORCID iD
Author: Zuo Li
Author: Hiroyuki Yoshimoto
Author: Isao Tomita
Author: Yoshishige Tsuchiya
Author: Yoshitaka Sasago
Author: Hideo Arimoto
Author: Fayong Liu ORCID iD
Author: Muhammad Husain
Author: Digh Hisamoto
Author: Harvey Rutt
Author: Sususu Kurihara

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