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Mid-infrared Ge-on-Si electro-absorption modulator

Mid-infrared Ge-on-Si electro-absorption modulator
Mid-infrared Ge-on-Si electro-absorption modulator

We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.

7-8
IEEE
Li, Tiantian
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Nedeljković, Milos
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Hattasan, Nannicha
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Khokhar, Ali Z.
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Reynolds, Scott A.
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Stanković, Stevan
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Banakar, Mehdi
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Cao, Wei
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Qu, Zhibo
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Littlejohns, Callum G.
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Soler Penadés, Jordi
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Grabska, Katarzyina
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Mastronardi, Lorenzo
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Thomson, David J.
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Gardes, Frederic Y.
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Reed, Graham T.
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Wu, Hequan
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Zhou, Zhiping
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Mashanovich, Goran Z.
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Li, Tiantian
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Nedeljković, Milos
9a8b131e-8e02-4c01-b3cd-ad8cbbd498bf
Hattasan, Nannicha
4f163cbe-eaaa-4771-82c5-af34c9c97fe9
Khokhar, Ali Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Reynolds, Scott A.
ed8f5413-c0c0-4449-ba35-626485f23a75
Stanković, Stevan
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Banakar, Mehdi
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Cao, Wei
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Qu, Zhibo
ff376b43-4352-4bd2-8420-c1c6cfccd45c
Littlejohns, Callum G.
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Soler Penadés, Jordi
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Grabska, Katarzyina
5f82b736-08ad-4ddb-9f6a-01eea5f9975f
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Thomson, David J.
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Gardes, Frederic Y.
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Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Wu, Hequan
d4a1427f-843e-422b-ba34-af4429cf9f4c
Zhou, Zhiping
ede65d1a-e058-4e7f-8960-ca6b3a248511
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051

Li, Tiantian, Nedeljković, Milos, Hattasan, Nannicha, Khokhar, Ali Z., Reynolds, Scott A., Stanković, Stevan, Banakar, Mehdi, Cao, Wei, Qu, Zhibo, Littlejohns, Callum G., Soler Penadés, Jordi, Grabska, Katarzyina, Mastronardi, Lorenzo, Thomson, David J., Gardes, Frederic Y., Reed, Graham T., Wu, Hequan, Zhou, Zhiping and Mashanovich, Goran Z. (2017) Mid-infrared Ge-on-Si electro-absorption modulator. In 2017 IEEE 14th International Conference on Group IV Photonics (GFP). IEEE. pp. 7-8 . (doi:10.1109/GROUP4.2017.8082169).

Record type: Conference or Workshop Item (Paper)

Abstract

We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.

Text
Mid-Infrared Ge-on-Si Electro-absorption Modulator - Accepted Manuscript
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More information

Published date: 24 October 2017
Venue - Dates: 14th International Conference on Group IV Photonics, GFP 2017, Berlin, Germany, 2017-08-23 - 2017-08-25

Identifiers

Local EPrints ID: 425498
URI: https://eprints.soton.ac.uk/id/eprint/425498
PURE UUID: 759b6c17-68d6-49dc-a4d3-4a38cc0603d4
ORCID for Stevan Stanković: ORCID iD orcid.org/0000-0001-6154-3138
ORCID for Wei Cao: ORCID iD orcid.org/0000-0003-1431-7060
ORCID for Jordi Soler Penadés: ORCID iD orcid.org/0000-0002-1706-8533
ORCID for Lorenzo Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778

Catalogue record

Date deposited: 22 Oct 2018 16:30
Last modified: 03 Dec 2019 01:32

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Contributors

Author: Tiantian Li
Author: Milos Nedeljković
Author: Nannicha Hattasan
Author: Ali Z. Khokhar
Author: Scott A. Reynolds
Author: Stevan Stanković ORCID iD
Author: Mehdi Banakar
Author: Wei Cao ORCID iD
Author: Zhibo Qu
Author: Callum G. Littlejohns
Author: Katarzyina Grabska
Author: Lorenzo Mastronardi ORCID iD
Author: Graham T. Reed
Author: Hequan Wu
Author: Zhiping Zhou

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