Electrochemically copper doped bismuth tellurium selenide thin films
Electrochemically copper doped bismuth tellurium selenide thin films
We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO3)2. The effect of Cu(NO3)2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive Xray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO3)2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to -390 μV K-1 at room temperature which is the highest reported to date for an electrodeposited bismuth tellurium compound.
Bismuth tellurium selenide, Electrodeposition, Thin films, Copper doping, Thermoelectrics
56-59
Burton, Matthew
4a0d87d4-48b8-46bb-8b4d-3b3cf754563b
Naylor, Andrew J.
680ad0b1-4537-465d-961e-4b10d49f5e34
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
December 2018
Burton, Matthew
4a0d87d4-48b8-46bb-8b4d-3b3cf754563b
Naylor, Andrew J.
680ad0b1-4537-465d-961e-4b10d49f5e34
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Burton, Matthew, Naylor, Andrew J. and Nandhakumar, Iris S.
(2018)
Electrochemically copper doped bismuth tellurium selenide thin films.
Electrochemistry Communications, 97, .
(doi:10.1016/j.elecom.2018.10.006).
Abstract
We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO3)2. The effect of Cu(NO3)2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive Xray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO3)2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to -390 μV K-1 at room temperature which is the highest reported to date for an electrodeposited bismuth tellurium compound.
Text
BiTeSe_Cu revised
- Accepted Manuscript
More information
Accepted/In Press date: 3 October 2018
e-pub ahead of print date: 10 October 2018
Published date: December 2018
Keywords:
Bismuth tellurium selenide, Electrodeposition, Thin films, Copper doping, Thermoelectrics
Identifiers
Local EPrints ID: 425633
URI: http://eprints.soton.ac.uk/id/eprint/425633
ISSN: 1388-2481
PURE UUID: 8e59581b-a4c6-4ce2-83f8-11d324de9b8c
Catalogue record
Date deposited: 29 Oct 2018 17:30
Last modified: 16 Mar 2024 07:12
Export record
Altmetrics
Contributors
Author:
Matthew Burton
Author:
Andrew J. Naylor
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
