Silicon-based single quantum dot emission in the telecoms C-band
Silicon-based single quantum dot emission in the telecoms C-band
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530-1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
C-band, GaAsSb, III-V semiconductors, quantum dots, Si substrate, single-photon sources
1740-1746
Orchard, Jonathan R.
63c8cdd0-2d9c-49cd-96ad-27559c560fea
Woodhead, Chris
7a034c66-eefb-4d2a-b6a1-e8e7402076fe
Wu, Jiang
0b2490eb-eef4-488e-97ab-f823e4870282
Tang, Mingchu
a9b38203-265f-458f-9205-9a94deffa997
Beanland, Richard
2ccecc30-c09f-4331-9cad-2d3e64e3fe1d
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Liu, Huiyun
ed01636f-0728-4d76-87ee-08b93635b2aa
Young, Robert J.
333e90a3-3175-44a6-82ab-f543e6e293db
Mowbray, David J.
6f922282-511a-4acc-9c81-54d1020dd29d
19 July 2017
Orchard, Jonathan R.
63c8cdd0-2d9c-49cd-96ad-27559c560fea
Woodhead, Chris
7a034c66-eefb-4d2a-b6a1-e8e7402076fe
Wu, Jiang
0b2490eb-eef4-488e-97ab-f823e4870282
Tang, Mingchu
a9b38203-265f-458f-9205-9a94deffa997
Beanland, Richard
2ccecc30-c09f-4331-9cad-2d3e64e3fe1d
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Liu, Huiyun
ed01636f-0728-4d76-87ee-08b93635b2aa
Young, Robert J.
333e90a3-3175-44a6-82ab-f543e6e293db
Mowbray, David J.
6f922282-511a-4acc-9c81-54d1020dd29d
Orchard, Jonathan R., Woodhead, Chris, Wu, Jiang, Tang, Mingchu, Beanland, Richard, Noori, Yasir, Liu, Huiyun, Young, Robert J. and Mowbray, David J.
(2017)
Silicon-based single quantum dot emission in the telecoms C-band.
ACS Photonics, 4 (7), .
(doi:10.1021/acsphotonics.7b00276).
Abstract
We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530-1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
Text
acsphotonics.7b00276
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More information
e-pub ahead of print date: 20 June 2017
Published date: 19 July 2017
Keywords:
C-band, GaAsSb, III-V semiconductors, quantum dots, Si substrate, single-photon sources
Identifiers
Local EPrints ID: 425670
URI: http://eprints.soton.ac.uk/id/eprint/425670
ISSN: 2330-4022
PURE UUID: 473ee3ea-1903-4ca7-a9b9-ad800c3268cc
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Date deposited: 31 Oct 2018 17:30
Last modified: 16 Mar 2024 04:37
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Contributors
Author:
Jonathan R. Orchard
Author:
Chris Woodhead
Author:
Jiang Wu
Author:
Mingchu Tang
Author:
Richard Beanland
Author:
Yasir Noori
Author:
Huiyun Liu
Author:
Robert J. Young
Author:
David J. Mowbray
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