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Silicon-based single quantum dot emission in the telecoms C-band

Silicon-based single quantum dot emission in the telecoms C-band
Silicon-based single quantum dot emission in the telecoms C-band

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530-1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

C-band, GaAsSb, III-V semiconductors, quantum dots, Si substrate, single-photon sources
2330-4022
1740-1746
Orchard, Jonathan R.
63c8cdd0-2d9c-49cd-96ad-27559c560fea
Woodhead, Chris
333ca212-317b-48ff-933a-82d7d43487fc
Wu, Jiang
0b2490eb-eef4-488e-97ab-f823e4870282
Tang, Mingchu
a9b38203-265f-458f-9205-9a94deffa997
Beanland, Richard
2ccecc30-c09f-4331-9cad-2d3e64e3fe1d
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Liu, Huiyun
ed01636f-0728-4d76-87ee-08b93635b2aa
Young, Robert J.
333e90a3-3175-44a6-82ab-f543e6e293db
Mowbray, David J.
6f922282-511a-4acc-9c81-54d1020dd29d
Orchard, Jonathan R.
63c8cdd0-2d9c-49cd-96ad-27559c560fea
Woodhead, Chris
333ca212-317b-48ff-933a-82d7d43487fc
Wu, Jiang
0b2490eb-eef4-488e-97ab-f823e4870282
Tang, Mingchu
a9b38203-265f-458f-9205-9a94deffa997
Beanland, Richard
2ccecc30-c09f-4331-9cad-2d3e64e3fe1d
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Liu, Huiyun
ed01636f-0728-4d76-87ee-08b93635b2aa
Young, Robert J.
333e90a3-3175-44a6-82ab-f543e6e293db
Mowbray, David J.
6f922282-511a-4acc-9c81-54d1020dd29d

Orchard, Jonathan R., Woodhead, Chris, Wu, Jiang, Tang, Mingchu, Beanland, Richard, Noori, Yasir, Liu, Huiyun, Young, Robert J. and Mowbray, David J. (2017) Silicon-based single quantum dot emission in the telecoms C-band. ACS Photonics, 4 (7), 1740-1746. (doi:10.1021/acsphotonics.7b00276).

Record type: Article

Abstract

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530-1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

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e-pub ahead of print date: 20 June 2017
Published date: 19 July 2017
Keywords: C-band, GaAsSb, III-V semiconductors, quantum dots, Si substrate, single-photon sources

Identifiers

Local EPrints ID: 425670
URI: http://eprints.soton.ac.uk/id/eprint/425670
ISSN: 2330-4022
PURE UUID: 473ee3ea-1903-4ca7-a9b9-ad800c3268cc
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779

Catalogue record

Date deposited: 31 Oct 2018 17:30
Last modified: 07 Oct 2020 02:21

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Contributors

Author: Jonathan R. Orchard
Author: Chris Woodhead
Author: Jiang Wu
Author: Mingchu Tang
Author: Richard Beanland
Author: Yasir Noori ORCID iD
Author: Huiyun Liu
Author: Robert J. Young
Author: David J. Mowbray

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