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Atomic-scale authentication with resonant tunneling diodes

Atomic-scale authentication with resonant tunneling diodes
Atomic-scale authentication with resonant tunneling diodes

The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

electronic material, molecular beam epitaxy (MBE), semiconducting
1625-1629
Roberts, J.
4db04e19-6d14-4d33-9dea-2beb4409f8cd
Bagci, I.E.
e1bbc020-49d6-4201-b40b-b80a049b4c11
Zawawi, M.A.M.
381647fc-1b91-4377-86a1-bda660e7beb5
Sexton, J.
7b227674-bec1-43a7-8f45-01097e781935
Hulbert, N.
271619b2-d0ae-4988-85ad-59a91c61e973
Noori, Y.J.
704d0b70-1ea6-4e00-92ce-cc2543087a09
Woodhead, C.S.
7a034c66-eefb-4d2a-b6a1-e8e7402076fe
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Migliorato, M.A.
6a0d0fb3-e10e-487a-9761-349af4cd9987
Roedig, U.
77ec02bf-0a48-4960-b02a-892f27501e6d
Young, R.J.
fd8e4231-c737-407f-923f-7126be4ae83c
Roberts, J.
4db04e19-6d14-4d33-9dea-2beb4409f8cd
Bagci, I.E.
e1bbc020-49d6-4201-b40b-b80a049b4c11
Zawawi, M.A.M.
381647fc-1b91-4377-86a1-bda660e7beb5
Sexton, J.
7b227674-bec1-43a7-8f45-01097e781935
Hulbert, N.
271619b2-d0ae-4988-85ad-59a91c61e973
Noori, Y.J.
704d0b70-1ea6-4e00-92ce-cc2543087a09
Woodhead, C.S.
7a034c66-eefb-4d2a-b6a1-e8e7402076fe
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Migliorato, M.A.
6a0d0fb3-e10e-487a-9761-349af4cd9987
Roedig, U.
77ec02bf-0a48-4960-b02a-892f27501e6d
Young, R.J.
fd8e4231-c737-407f-923f-7126be4ae83c

Roberts, J., Bagci, I.E., Zawawi, M.A.M., Sexton, J., Hulbert, N., Noori, Y.J., Woodhead, C.S., Missous, M., Migliorato, M.A., Roedig, U. and Young, R.J. (2016) Atomic-scale authentication with resonant tunneling diodes. MRS Advances, 1 (22), 1625-1629. (doi:10.1557/adv.2016.156).

Record type: Article

Abstract

The room temperature electronic characteristics of resonant tunneling diodes (RTDs) containing AlAs/InGaAs quantum wells are studied. Differences in the peak current and voltages, associated with device-to-device variations in the structure and width of the quantum well are analyzed. A method to use these differences between devices is introduced and shown to uniquely identify each of the individual devices under test. This investigation shows that quantum confinement in RTDs allows them to operate as physical unclonable functions.

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More information

e-pub ahead of print date: 24 February 2016
Published date: 2016
Keywords: electronic material, molecular beam epitaxy (MBE), semiconducting

Identifiers

Local EPrints ID: 425673
URI: https://eprints.soton.ac.uk/id/eprint/425673
PURE UUID: 6e0a22f7-c6cb-44af-91a5-f89330fe53c0
ORCID for Y.J. Noori: ORCID iD orcid.org/0000-0001-5285-8779

Catalogue record

Date deposited: 31 Oct 2018 17:30
Last modified: 20 Jul 2019 00:22

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Contributors

Author: J. Roberts
Author: I.E. Bagci
Author: M.A.M. Zawawi
Author: J. Sexton
Author: N. Hulbert
Author: Y.J. Noori ORCID iD
Author: C.S. Woodhead
Author: M. Missous
Author: M.A. Migliorato
Author: U. Roedig
Author: R.J. Young

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