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Room-temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

Room-temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires
Room-temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires

There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron-hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.

Journal Article, Research Support, Non-U.S. Gov't
1530-6984
235-240
Alhodaib, Aiyeshah
b7d84352-6afb-45f3-8a60-e7c1c243e15d
Noori, Yasir J.
704d0b70-1ea6-4e00-92ce-cc2543087a09
Carrington, Peter J.
8119612d-5b60-4146-a79f-adf3b7b69355
Sanchez, Ana M.
8297b889-35f4-43c2-9474-59efa65b2e47
Thompson, Michael D.
23bd0e7a-d85e-49a0-9004-b71a2ab255b3
Young, Robert J.
0eb9dbbf-9d61-42e7-ba81-e4cc9e99bbab
Krier, Anthony
d75a21a9-6160-49ff-9256-76be82e35c42
Marshall, Andrew R.J.
0e7403c2-20d0-46e1-b2d6-2f1ab101d2b1
Alhodaib, Aiyeshah
b7d84352-6afb-45f3-8a60-e7c1c243e15d
Noori, Yasir J.
704d0b70-1ea6-4e00-92ce-cc2543087a09
Carrington, Peter J.
8119612d-5b60-4146-a79f-adf3b7b69355
Sanchez, Ana M.
8297b889-35f4-43c2-9474-59efa65b2e47
Thompson, Michael D.
23bd0e7a-d85e-49a0-9004-b71a2ab255b3
Young, Robert J.
0eb9dbbf-9d61-42e7-ba81-e4cc9e99bbab
Krier, Anthony
d75a21a9-6160-49ff-9256-76be82e35c42
Marshall, Andrew R.J.
0e7403c2-20d0-46e1-b2d6-2f1ab101d2b1

Alhodaib, Aiyeshah, Noori, Yasir J., Carrington, Peter J., Sanchez, Ana M., Thompson, Michael D., Young, Robert J., Krier, Anthony and Marshall, Andrew R.J. (2018) Room-temperature mid-infrared emission from faceted InAsSb multi quantum wells embedded in InAs nanowires. Nano Letters, 18 (1), 235-240. (doi:10.1021/acs.nanolett.7b03977).

Record type: Article

Abstract

There is considerable interest in the development of InAsSb-based nanowires for infrared photonics due to their high tunability across the infrared spectral range, high mobility, and integration with silicon electronics. However, optical emission is currently limited to low temperatures due to strong nonradiative Auger and surface recombination. Here, we present a new structure based on conical type II InAsSb/InAs multiquantum wells within InAs nanowires which exhibit bright mid-infrared photoluminescence up to room temperature. The nanowires are grown by catalyst-free selective area epitaxy on silicon. This unique geometry confines the electron-hole recombination to within the quantum wells which alleviates the problems associated with recombination via surface states, while the quantum confinement of carriers increases the radiative recombination rate and suppresses Auger recombination. This demonstration will pave the way for the development of new integrated quantum light sources operating in the technologically important mid-infrared spectral range.

Text
acs.nanolett.7b03977 - Accepted Manuscript
Available under License Creative Commons Attribution.
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More information

e-pub ahead of print date: 30 November 2017
Published date: 10 January 2018
Keywords: Journal Article, Research Support, Non-U.S. Gov't

Identifiers

Local EPrints ID: 425767
URI: https://eprints.soton.ac.uk/id/eprint/425767
ISSN: 1530-6984
PURE UUID: 774f66d1-8c44-4aaf-9a54-f5efe4ee04c2
ORCID for Yasir J. Noori: ORCID iD orcid.org/0000-0001-5285-8779

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Date deposited: 02 Nov 2018 17:30
Last modified: 14 Mar 2019 01:21

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Contributors

Author: Aiyeshah Alhodaib
Author: Yasir J. Noori ORCID iD
Author: Peter J. Carrington
Author: Ana M. Sanchez
Author: Michael D. Thompson
Author: Robert J. Young
Author: Anthony Krier
Author: Andrew R.J. Marshall

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