Electrodeposition of crystalline HgTe from a non-aqueous plating bath
Electrodeposition of crystalline HgTe from a non-aqueous plating bath
This paper presents a method for the electrodeposition of stoichiometric, crystalline HgTe, which provides advantages over conventional HgTe preparation techniques, such as physical and chemical vapor deposition, in a number of ways; e.g. fast deposition rates (2 mm/hr) and the ability to reliably produce stoichiometric or near-stoichiometric material. The HgTe is prepared in a dichloromethane based plating bath using [NnBu4]2[TeCl6] and [NnBu4]2[HgCl4] as the precursors for Te and Hg, respectively. The paper details the electrochemical behavior of the plating bath and its components, together with a detailed characterization of the morphology, crystallinity and composition of the prepared HgTe.
D802-D807
Kissling, Gabriela
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Aziz, Mohsin
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Lodge, Andrew
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Zhang, Wenjian
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Alibouri, Mehrdad
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Huang, Ruomeng
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Hector, Andrew L.
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Reid, Gillian
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De Groot, Cornelis
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Beanland, Richard
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Bartlett, Philip N.
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Smith, David C.
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Kissling, Gabriela
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Aziz, Mohsin
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Lodge, Andrew
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Zhang, Wenjian
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Alibouri, Mehrdad
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Huang, Ruomeng
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Hector, Andrew L.
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Reid, Gillian
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De Groot, Cornelis
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Beanland, Richard
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Bartlett, Philip N.
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Smith, David C.
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Kissling, Gabriela, Aziz, Mohsin, Lodge, Andrew, Zhang, Wenjian, Alibouri, Mehrdad, Huang, Ruomeng, Hector, Andrew L., Reid, Gillian, De Groot, Cornelis, Beanland, Richard, Bartlett, Philip N. and Smith, David C.
(2018)
Electrodeposition of crystalline HgTe from a non-aqueous plating bath.
Journal of the Electrochemical Society, 165 (16), .
(doi:10.1149/2.0421816jes).
Abstract
This paper presents a method for the electrodeposition of stoichiometric, crystalline HgTe, which provides advantages over conventional HgTe preparation techniques, such as physical and chemical vapor deposition, in a number of ways; e.g. fast deposition rates (2 mm/hr) and the ability to reliably produce stoichiometric or near-stoichiometric material. The HgTe is prepared in a dichloromethane based plating bath using [NnBu4]2[TeCl6] and [NnBu4]2[HgCl4] as the precursors for Te and Hg, respectively. The paper details the electrochemical behavior of the plating bath and its components, together with a detailed characterization of the morphology, crystallinity and composition of the prepared HgTe.
Text
J. Electrochem. Soc.-2018-Kissling-D802-7
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In preparation date: 2018
e-pub ahead of print date: 11 December 2018
Identifiers
Local EPrints ID: 426112
URI: http://eprints.soton.ac.uk/id/eprint/426112
ISSN: 0013-4651
PURE UUID: 7537670b-c70f-4f9a-ab9d-4427eac18b6d
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Date deposited: 14 Nov 2018 17:30
Last modified: 16 Mar 2024 04:10
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Contributors
Author:
Gabriela Kissling
Author:
Mohsin Aziz
Author:
Andrew Lodge
Author:
Mehrdad Alibouri
Author:
Ruomeng Huang
Author:
Richard Beanland
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