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[Ge(TenBu)4]-a single precursor for the chemical vapour deposition of germanium telluride thin films

[Ge(TenBu)4]-a single precursor for the chemical vapour deposition of germanium telluride thin films
[Ge(TenBu)4]-a single precursor for the chemical vapour deposition of germanium telluride thin films
Reaction of activated germanium with nBu2Te2 in THF solution was shown to be more effective for the preparation of the germanium(IV) tellurolate compound, [Ge(TenBu)4], than reaction of GeCl4 with LiTenBu in a 1 : 4 molar ratio in THF. The product was characterised by 1H, 13C{1H} NMR spectroscopy and microanalysis and evaluated as a single source precursor for the low pressure chemical vapour deposition of GeTe thin films. Depending upon deposition conditions, either dull grey films (predominantly elemental Te) or highly reflective (GeTe) films were obtained from the pure precursor. Grazing incidence X-ray diffraction shows that the highly reflective films are comprised of the rhombohedral α-GeTe phase, while scanning electron microscopy and energy dispersive X-ray analysis reveal rhomb-shaped crystallites with a 49(1) : 51(1)% Ge : Te ratio. This structure is also confirmed from Raman spectra. Van der Pauw measurements show ρ = 3.2(1) × 10−4 Ω cm and Hall electrical measurements indicate that the GeTe thin films are p-type, with a mobility of 8.4(7) cm2 V−1 s−1 and carrier concentration of 2.5(2) × 1021 cm−3. The high p-type concentration is most likely a result of the substantial Ge vacancies in its sub-lattice, in line with the EDX elemental ratios.
0300-9246
117-124
Hawken, Samantha, Louise
1f5bc11f-bcef-436b-b4bf-065b41a9a09f
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Jura, Marek
e4a8ae2b-5609-45bb-99d8-a2320b9c89b9
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Stenning, G.B.G.
0ea80ad9-e72e-45bb-bf0a-3df9a2e65cda
Hawken, Samantha, Louise
1f5bc11f-bcef-436b-b4bf-065b41a9a09f
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Jura, Marek
e4a8ae2b-5609-45bb-99d8-a2320b9c89b9
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Stenning, G.B.G.
0ea80ad9-e72e-45bb-bf0a-3df9a2e65cda

Hawken, Samantha, Louise, Huang, Ruomeng, De Groot, Cornelis, Hector, Andrew L., Jura, Marek, Levason, William and Stenning, G.B.G. (2019) [Ge(TenBu)4]-a single precursor for the chemical vapour deposition of germanium telluride thin films. Dalton Transactions, 48, 117-124. (doi:10.1039/C8DT03263G).

Record type: Article

Abstract

Reaction of activated germanium with nBu2Te2 in THF solution was shown to be more effective for the preparation of the germanium(IV) tellurolate compound, [Ge(TenBu)4], than reaction of GeCl4 with LiTenBu in a 1 : 4 molar ratio in THF. The product was characterised by 1H, 13C{1H} NMR spectroscopy and microanalysis and evaluated as a single source precursor for the low pressure chemical vapour deposition of GeTe thin films. Depending upon deposition conditions, either dull grey films (predominantly elemental Te) or highly reflective (GeTe) films were obtained from the pure precursor. Grazing incidence X-ray diffraction shows that the highly reflective films are comprised of the rhombohedral α-GeTe phase, while scanning electron microscopy and energy dispersive X-ray analysis reveal rhomb-shaped crystallites with a 49(1) : 51(1)% Ge : Te ratio. This structure is also confirmed from Raman spectra. Van der Pauw measurements show ρ = 3.2(1) × 10−4 Ω cm and Hall electrical measurements indicate that the GeTe thin films are p-type, with a mobility of 8.4(7) cm2 V−1 s−1 and carrier concentration of 2.5(2) × 1021 cm−3. The high p-type concentration is most likely a result of the substantial Ge vacancies in its sub-lattice, in line with the EDX elemental ratios.

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Accepted/In Press date: 4 October 2018
e-pub ahead of print date: 23 November 2018
Published date: 7 January 2019

Identifiers

Local EPrints ID: 426351
URI: https://eprints.soton.ac.uk/id/eprint/426351
ISSN: 0300-9246
PURE UUID: 1457e8a7-b310-4647-8ca6-f6586cb8c540
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971

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Date deposited: 23 Nov 2018 17:30
Last modified: 20 Jul 2019 01:28

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