Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures
Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures
The properties of Er3+- doped gallium lanthanum sulphide thin films prepared on a silicon substrate by femtosecond pulsed laser deposition were studied as a function of process temperature. The films were characterised using transition electron microscopy imaging, X-ray diffractometry, Raman spectroscopy, fluorescence spectroscopy, and UV–Vis–NIR spectroscopy.
The results show that by increasing the substrate temperature, the deposited layer thickness increases and the crystallinity of the films changes. The room temperature photoluminescence and lifetimes of the 4I13/2→4I15/2 transition of Er3+ are reported in the paper.
1-8
Albarkaty, K.
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Kumi-Barimah, E.
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Craig, C.
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Hewak, D.
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Jose, G.
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Chandrappan, J.
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January 2019
Albarkaty, K.
d1322c92-73fc-4b15-b93b-6c6609a49a80
Kumi-Barimah, E.
8ae72f6f-d3ce-4420-8472-8d6fcaf205dd
Craig, C.
2328b42b-552e-4a82-941d-45449e952f10
Hewak, D.
87c80070-c101-4f7a-914f-4cc3131e3db0
Jose, G.
750e75c4-99c5-4886-b29c-5dd0b94000b7
Chandrappan, J.
3cd8cf7f-1923-4681-ad00-df68b95f240b
Albarkaty, K., Kumi-Barimah, E., Craig, C., Hewak, D., Jose, G. and Chandrappan, J.
(2019)
Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures.
Applied Physics A: Materials Science & Processing, 125 (1), .
(doi:10.1007/s00339-018-2286-x).
Abstract
The properties of Er3+- doped gallium lanthanum sulphide thin films prepared on a silicon substrate by femtosecond pulsed laser deposition were studied as a function of process temperature. The films were characterised using transition electron microscopy imaging, X-ray diffractometry, Raman spectroscopy, fluorescence spectroscopy, and UV–Vis–NIR spectroscopy.
The results show that by increasing the substrate temperature, the deposited layer thickness increases and the crystallinity of the films changes. The room temperature photoluminescence and lifetimes of the 4I13/2→4I15/2 transition of Er3+ are reported in the paper.
Text
Albarkaty, 2018 - Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures
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Accepted/In Press date: 27 November 2018
e-pub ahead of print date: 5 December 2018
Published date: January 2019
Identifiers
Local EPrints ID: 426872
URI: http://eprints.soton.ac.uk/id/eprint/426872
ISSN: 0947-8396
PURE UUID: 0baf68e3-5347-47b3-b46e-9ebd6001a6e3
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Date deposited: 14 Dec 2018 17:30
Last modified: 16 Mar 2024 04:10
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Contributors
Author:
K. Albarkaty
Author:
E. Kumi-Barimah
Author:
G. Jose
Author:
J. Chandrappan
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