A new ageing-aware approach via path isolation
A new ageing-aware approach via path isolation
NBTI is becoming one of the major circuit reliability issues in nano-scale technologies. BTI can cause a threshold voltage shift in CMOS devices and consequently increase circuit delay. This paper proposed a novel ageing aware approach to improve circuit's lifetime. The vulnerable circuit paths against ageing effects are isolated. In addition, minimum area overhead is consumed by adopting proposed synthesis algorithm. The simulation results show that the proposed approach can save up to 67.7% area compared with the conventional over-design technique.
Lu, Yue
447d3b21-4bd8-498d-bd22-f018566b4604
Duan, Shengyu
cb8534a0-9971-40b9-8c11-72eca641f3a1
Kazmierski, Tom J.
a97d7958-40c3-413f-924d-84545216092a
8 November 2018
Lu, Yue
447d3b21-4bd8-498d-bd22-f018566b4604
Duan, Shengyu
cb8534a0-9971-40b9-8c11-72eca641f3a1
Kazmierski, Tom J.
a97d7958-40c3-413f-924d-84545216092a
Lu, Yue, Duan, Shengyu and Kazmierski, Tom J.
(2018)
A new ageing-aware approach via path isolation.
In 2018 Forum on Specification and Design Languages (FDL).
vol. 2018-September,
IEEE.
5 pp
.
(doi:10.1109/FDL.2018.8524033).
Record type:
Conference or Workshop Item
(Paper)
Abstract
NBTI is becoming one of the major circuit reliability issues in nano-scale technologies. BTI can cause a threshold voltage shift in CMOS devices and consequently increase circuit delay. This paper proposed a novel ageing aware approach to improve circuit's lifetime. The vulnerable circuit paths against ageing effects are isolated. In addition, minimum area overhead is consumed by adopting proposed synthesis algorithm. The simulation results show that the proposed approach can save up to 67.7% area compared with the conventional over-design technique.
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More information
e-pub ahead of print date: 10 September 2018
Published date: 8 November 2018
Venue - Dates:
2018 Forum on Specification and Design Languages, FDL 2018, , Garching, Germany, 2018-09-10 - 2018-09-12
Identifiers
Local EPrints ID: 427008
URI: http://eprints.soton.ac.uk/id/eprint/427008
ISSN: 1636-9874
PURE UUID: 91fcacc9-47fd-425a-87a6-a5b03584275a
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Date deposited: 20 Dec 2018 17:30
Last modified: 15 Mar 2024 23:29
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Contributors
Author:
Yue Lu
Author:
Shengyu Duan
Author:
Tom J. Kazmierski
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