Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy
Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy
We report on the fabrication of memory devices based on a nanoporous GeSbTe layer electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate along two distinct electrical modes consisting of a volatile or a non-volatile resistance switching mode upon appropriate preconditioning procedures. Based on electrical measurements conducted in both switching modes and physical analysis performed on a device after electrical stress, resistance switching is attributed to the formation/dissolution of a conductive filament from the Ag electrode into the GST layer whereas the volatile/non-volatile resistance switching is attributed to the presence of an interface layer between the GST and the Ag top electrode. Due to their simple, low-cost and low-temperature fabrication procedure, these devices could be advantageously exploited in flexible electronic applications or embedded into the back-end of line CMOS technology.
chalcogenide, conductive-bridge random access memories, electrodeposition, GeSbTe, non-volatile memory, redox-based resistive switching memories, volatile memory
Rebora, Charles
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Huang, Ruomeng
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Kissling, Gabriela P.
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Bocquet, Marc
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Groot, Kees De
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Favre, Luc
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Grosso, David
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Deleruyelle, Damien
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Putero, Magali
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1 November 2018
Rebora, Charles
fd8ac3ad-dc03-453a-a3fc-3239e004a879
Huang, Ruomeng
55c6fba5-0275-4471-af5c-fb0dd2daaa64
Kissling, Gabriela P.
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Bocquet, Marc
0a09698f-f798-477c-9950-b931b58f1905
Groot, Kees De
92cd2e02-fcc4-43da-8816-c86f966be90c
Favre, Luc
ee0770da-d113-46db-85e4-06a1dafd79b1
Grosso, David
a116d4fa-5afe-418c-8a72-dc177e4a3908
Deleruyelle, Damien
cd14e865-4429-4c1f-a86b-75df79bd405b
Putero, Magali
2d9990cd-9f00-4447-a9be-9249f55a89ab
Rebora, Charles, Huang, Ruomeng, Kissling, Gabriela P., Bocquet, Marc, Groot, Kees De, Favre, Luc, Grosso, David, Deleruyelle, Damien and Putero, Magali
(2018)
Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy.
Nanotechnology, 30 (2), [025202].
(doi:10.1088/1361-6528/aae6db).
Abstract
We report on the fabrication of memory devices based on a nanoporous GeSbTe layer electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate along two distinct electrical modes consisting of a volatile or a non-volatile resistance switching mode upon appropriate preconditioning procedures. Based on electrical measurements conducted in both switching modes and physical analysis performed on a device after electrical stress, resistance switching is attributed to the formation/dissolution of a conductive filament from the Ag electrode into the GST layer whereas the volatile/non-volatile resistance switching is attributed to the presence of an interface layer between the GST and the Ag top electrode. Due to their simple, low-cost and low-temperature fabrication procedure, these devices could be advantageously exploited in flexible electronic applications or embedded into the back-end of line CMOS technology.
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More information
Accepted/In Press date: 9 October 2018
e-pub ahead of print date: 9 October 2018
Published date: 1 November 2018
Keywords:
chalcogenide, conductive-bridge random access memories, electrodeposition, GeSbTe, non-volatile memory, redox-based resistive switching memories, volatile memory
Identifiers
Local EPrints ID: 427310
URI: http://eprints.soton.ac.uk/id/eprint/427310
ISSN: 0957-4484
PURE UUID: 65f74390-c418-42b5-a15d-5db8cda7a06a
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Date deposited: 11 Jan 2019 17:30
Last modified: 06 Jun 2024 01:40
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Contributors
Author:
Charles Rebora
Author:
Ruomeng Huang
Author:
Gabriela P. Kissling
Author:
Marc Bocquet
Author:
Luc Favre
Author:
David Grosso
Author:
Damien Deleruyelle
Author:
Magali Putero
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