The University of Southampton
University of Southampton Institutional Repository

Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy

Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy
Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy

We report on the fabrication of memory devices based on a nanoporous GeSbTe layer electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate along two distinct electrical modes consisting of a volatile or a non-volatile resistance switching mode upon appropriate preconditioning procedures. Based on electrical measurements conducted in both switching modes and physical analysis performed on a device after electrical stress, resistance switching is attributed to the formation/dissolution of a conductive filament from the Ag electrode into the GST layer whereas the volatile/non-volatile resistance switching is attributed to the presence of an interface layer between the GST and the Ag top electrode. Due to their simple, low-cost and low-temperature fabrication procedure, these devices could be advantageously exploited in flexible electronic applications or embedded into the back-end of line CMOS technology.

chalcogenide, conductive-bridge random access memories, electrodeposition, GeSbTe, non-volatile memory, redox-based resistive switching memories, volatile memory
0957-4484
Rebora, Charles
fd8ac3ad-dc03-453a-a3fc-3239e004a879
Huang, Ruomeng
55c6fba5-0275-4471-af5c-fb0dd2daaa64
Kissling, Gabriela P.
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Bocquet, Marc
0a09698f-f798-477c-9950-b931b58f1905
Groot, Kees De
92cd2e02-fcc4-43da-8816-c86f966be90c
Favre, Luc
ee0770da-d113-46db-85e4-06a1dafd79b1
Grosso, David
a116d4fa-5afe-418c-8a72-dc177e4a3908
Deleruyelle, Damien
cd14e865-4429-4c1f-a86b-75df79bd405b
Putero, Magali
2d9990cd-9f00-4447-a9be-9249f55a89ab
Rebora, Charles
fd8ac3ad-dc03-453a-a3fc-3239e004a879
Huang, Ruomeng
55c6fba5-0275-4471-af5c-fb0dd2daaa64
Kissling, Gabriela P.
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Bocquet, Marc
0a09698f-f798-477c-9950-b931b58f1905
Groot, Kees De
92cd2e02-fcc4-43da-8816-c86f966be90c
Favre, Luc
ee0770da-d113-46db-85e4-06a1dafd79b1
Grosso, David
a116d4fa-5afe-418c-8a72-dc177e4a3908
Deleruyelle, Damien
cd14e865-4429-4c1f-a86b-75df79bd405b
Putero, Magali
2d9990cd-9f00-4447-a9be-9249f55a89ab

Rebora, Charles, Huang, Ruomeng, Kissling, Gabriela P., Bocquet, Marc, Groot, Kees De, Favre, Luc, Grosso, David, Deleruyelle, Damien and Putero, Magali (2018) Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy. Nanotechnology, 30 (2), [025202]. (doi:10.1088/1361-6528/aae6db).

Record type: Article

Abstract

We report on the fabrication of memory devices based on a nanoporous GeSbTe layer electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate along two distinct electrical modes consisting of a volatile or a non-volatile resistance switching mode upon appropriate preconditioning procedures. Based on electrical measurements conducted in both switching modes and physical analysis performed on a device after electrical stress, resistance switching is attributed to the formation/dissolution of a conductive filament from the Ag electrode into the GST layer whereas the volatile/non-volatile resistance switching is attributed to the presence of an interface layer between the GST and the Ag top electrode. Due to their simple, low-cost and low-temperature fabrication procedure, these devices could be advantageously exploited in flexible electronic applications or embedded into the back-end of line CMOS technology.

Full text not available from this repository.

More information

Accepted/In Press date: 9 October 2018
e-pub ahead of print date: 9 October 2018
Published date: 1 November 2018
Keywords: chalcogenide, conductive-bridge random access memories, electrodeposition, GeSbTe, non-volatile memory, redox-based resistive switching memories, volatile memory

Identifiers

Local EPrints ID: 427310
URI: http://eprints.soton.ac.uk/id/eprint/427310
ISSN: 0957-4484
PURE UUID: 65f74390-c418-42b5-a15d-5db8cda7a06a
ORCID for Gabriela P. Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 11 Jan 2019 17:30
Last modified: 07 Oct 2020 01:46

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×