Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices
We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm−1, peak width (full width at half-maximum) of 68.9 cm−1, and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the 1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.
193-200
Oo, Swe
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Tarazona, Antulio
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Khokhar, Ali
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Petra, Rafidah
578011d0-6b70-412e-abb7-d04acce3ac4a
Franz, Yohann
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Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Peacock, Anna
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Chong, Harold
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1 February 2019
Oo, Swe
6495f6da-8f17-4484-98fb-6151b4efbd9a
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Petra, Rafidah
578011d0-6b70-412e-abb7-d04acce3ac4a
Franz, Yohann
edb6208c-9f65-42c4-965e-b6bc54945602
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Peacock, Anna
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Oo, Swe, Tarazona, Antulio, Khokhar, Ali, Petra, Rafidah, Franz, Yohann, Mashanovich, Goran, Reed, Graham, Peacock, Anna and Chong, Harold
(2019)
Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices.
Photonics Research, 7 (2), , [331501].
(doi:10.1364/PRJ.7.000193).
Abstract
We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm−1, peak width (full width at half-maximum) of 68.9 cm−1, and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the 1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.
Text
prj-7-2-193
- Accepted Manuscript
Text
PR-331501_AUTHOR_1
- Proof
More information
Accepted/In Press date: 18 December 2018
e-pub ahead of print date: 30 January 2019
Published date: 1 February 2019
Identifiers
Local EPrints ID: 427414
URI: http://eprints.soton.ac.uk/id/eprint/427414
PURE UUID: fb244e16-93d8-4397-ba6e-282c45039c21
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Date deposited: 15 Jan 2019 17:30
Last modified: 18 Mar 2024 03:08
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Contributors
Author:
Swe Oo
Author:
Antulio Tarazona
Author:
Ali Khokhar
Author:
Rafidah Petra
Author:
Yohann Franz
Author:
Harold Chong
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