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Chalcogenide materials and applications: from bulk to 2D (Invited Talk)

Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
In this talk, we give an overview of our chalcogenide material and device capabilities and the applications they are driving, scaling from bulk glasses to two-dimensional films. Using a melt-quench technique, we routinely manufacture a family of Ga:La:S semiconducting glasses which offer considerable advantages over commercially available chalcogenides, expanding uses in defense, medical and sensing. We use these glasses to produce optical fibers using extrusion, rod and crucible drawing. We are also developing these materials further, for example by incorporating selenium resulting in improved infrared transmission, enabling both thermal and visible imaging for object recognition. Transition metal dichalcogenides (TMDCs) are promising alternatives to graphene, with bandgaps tunable through composition and number of layers. Today’s challenge remains in the fabrication of large area atomically thin TMDCs on desired substrates. We have developed chemical vapor and atomic layer deposition techniques to deposit highly crystalline TMDCs, from nanometers down to a monolayer on up to 6 inch wafers. We recently developed novel patterning techniques that result in defect free devices. Our applications range from 3D photonic crystals to photovoltaics and transistors. Finally we deposit chalcogenide thin films via sputtering and demonstrate applications which exploit their phase change and thermoelectric properties.
Morgan, Katrina
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Zeimpekis, Ioannis
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Huang, Chung-Che
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Feng, Zhuo
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Craig, Christopher
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Weatherby, Edwin
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Aspiotis, Nikolaos
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Alzaidy, Ghadah, Abdulrahman
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Ravagli, Andrea
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Moog, Bruno, Jean
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Guzman Cruz, Fernando, Alberto
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Lewis, Adam, Henry
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Delaney, Matthew
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Hewak, Daniel
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Morgan, Katrina
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Zeimpekis, Ioannis
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Huang, Chung-Che
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Feng, Zhuo
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Craig, Christopher
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Weatherby, Edwin
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Aspiotis, Nikolaos
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Alzaidy, Ghadah, Abdulrahman
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Ravagli, Andrea
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Moog, Bruno, Jean
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Guzman Cruz, Fernando, Alberto
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Lewis, Adam, Henry
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Delaney, Matthew
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Hewak, Daniel
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Morgan, Katrina, Zeimpekis, Ioannis, Huang, Chung-Che, Feng, Zhuo, Craig, Christopher, Weatherby, Edwin, Aspiotis, Nikolaos, Alzaidy, Ghadah, Abdulrahman, Ravagli, Andrea, Moog, Bruno, Jean, Guzman Cruz, Fernando, Alberto, Lewis, Adam, Henry, Delaney, Matthew and Hewak, Daniel (2019) Chalcogenide materials and applications: from bulk to 2D (Invited Talk). Electronic Materials and Applications 2019 (EMA 2019), DoubleTree by Hilton Orlando at Sea World Conference Hotel, United States. 23 - 25 Jan 2019. 1 pp .

Record type: Conference or Workshop Item (Other)

Abstract

In this talk, we give an overview of our chalcogenide material and device capabilities and the applications they are driving, scaling from bulk glasses to two-dimensional films. Using a melt-quench technique, we routinely manufacture a family of Ga:La:S semiconducting glasses which offer considerable advantages over commercially available chalcogenides, expanding uses in defense, medical and sensing. We use these glasses to produce optical fibers using extrusion, rod and crucible drawing. We are also developing these materials further, for example by incorporating selenium resulting in improved infrared transmission, enabling both thermal and visible imaging for object recognition. Transition metal dichalcogenides (TMDCs) are promising alternatives to graphene, with bandgaps tunable through composition and number of layers. Today’s challenge remains in the fabrication of large area atomically thin TMDCs on desired substrates. We have developed chemical vapor and atomic layer deposition techniques to deposit highly crystalline TMDCs, from nanometers down to a monolayer on up to 6 inch wafers. We recently developed novel patterning techniques that result in defect free devices. Our applications range from 3D photonic crystals to photovoltaics and transistors. Finally we deposit chalcogenide thin films via sputtering and demonstrate applications which exploit their phase change and thermoelectric properties.

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More information

Published date: 24 January 2019
Venue - Dates: Electronic Materials and Applications 2019 (EMA 2019), DoubleTree by Hilton Orlando at Sea World Conference Hotel, United States, 2019-01-23 - 2019-01-25

Identifiers

Local EPrints ID: 427471
URI: http://eprints.soton.ac.uk/id/eprint/427471
PURE UUID: 3d1b5574-747e-4baa-af3d-25043ed739fd
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Christopher Craig: ORCID iD orcid.org/0000-0001-6919-4294
ORCID for Fernando, Alberto Guzman Cruz: ORCID iD orcid.org/0000-0002-8096-3805
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 17 Jan 2019 17:30
Last modified: 18 Feb 2021 17:18

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Contributors

Author: Katrina Morgan ORCID iD
Author: Chung-Che Huang ORCID iD
Author: Zhuo Feng
Author: Edwin Weatherby
Author: Nikolaos Aspiotis
Author: Ghadah, Abdulrahman Alzaidy
Author: Andrea Ravagli
Author: Bruno, Jean Moog
Author: Fernando, Alberto Guzman Cruz ORCID iD
Author: Adam, Henry Lewis
Author: Matthew Delaney
Author: Daniel Hewak ORCID iD

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