Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths
Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths
We examine the electro-optic effect at wavelengths ranging from 1.31 to 2.02 µm for: (1) an Electronic Variable Optical Attenuator (EVOA); and (2) a Micro-Ring Resonator (MRR). For the EVOA, simulations were performed to ascertain the relationship between free-carrier concentration and optical attenuation, and are in agreement with our observation of an increase in attenuation with increasing wavelength. MRRs were fabricated for use around wavelengths of 2 µm to explore the sensitivity of operation to bus-to-ring coupling gap and p-n junction offset. Trends observed in the experiment are replicated by simulation, calibrated using the observations of the EVOA operation. The previously proposed efficiency increase of operation around 2 µm compared to more traditional wavelengths is demonstrated. Future development of devices for these wavelengths, supported by amplification using Thulium Doped Fiber Amplifier (TDFA) technology, is a promising route to aid in the alleviation of increasing demands on communication networks.
166-174
Hagan, David E.
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Nedeljković, Miloš
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Cao, Wei
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Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Mashanovich, Goran Z.
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Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b
7 January 2019
Hagan, David E.
46cd7f5c-243f-451e-9a82-7e4b1c01acb9
Nedeljković, Miloš
b64e21c2-1b95-479d-a35c-3456dff8c796
Cao, Wei
5202fa2b-a471-45d4-84e9-9104dffdbbfc
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b
Hagan, David E., Nedeljković, Miloš, Cao, Wei, Thomson, David J., Mashanovich, Goran Z. and Knights, Andrew P.
(2019)
Experimental quantification of the free-carrier effect in silicon waveguides at extended wavelengths.
Optics Express, 27 (1), .
(doi:10.1364/OE.27.000166).
Abstract
We examine the electro-optic effect at wavelengths ranging from 1.31 to 2.02 µm for: (1) an Electronic Variable Optical Attenuator (EVOA); and (2) a Micro-Ring Resonator (MRR). For the EVOA, simulations were performed to ascertain the relationship between free-carrier concentration and optical attenuation, and are in agreement with our observation of an increase in attenuation with increasing wavelength. MRRs were fabricated for use around wavelengths of 2 µm to explore the sensitivity of operation to bus-to-ring coupling gap and p-n junction offset. Trends observed in the experiment are replicated by simulation, calibrated using the observations of the EVOA operation. The previously proposed efficiency increase of operation around 2 µm compared to more traditional wavelengths is demonstrated. Future development of devices for these wavelengths, supported by amplification using Thulium Doped Fiber Amplifier (TDFA) technology, is a promising route to aid in the alleviation of increasing demands on communication networks.
Text
oe-27-1-166
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Accepted/In Press date: 12 December 2018
e-pub ahead of print date: 3 January 2019
Published date: 7 January 2019
Identifiers
Local EPrints ID: 427548
URI: http://eprints.soton.ac.uk/id/eprint/427548
ISSN: 1094-4087
PURE UUID: c89cafb9-489c-42fa-b829-82873c9e316f
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Date deposited: 23 Jan 2019 17:30
Last modified: 14 Dec 2024 02:48
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Contributors
Author:
David E. Hagan
Author:
Miloš Nedeljković
Author:
Wei Cao
Author:
David J. Thomson
Author:
Goran Z. Mashanovich
Author:
Andrew P. Knights
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