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Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides

Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides
Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides

Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 ± 7.31 dB/cm and at least 52.4 ± 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.

1-9
Rönn, John
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Zhang, Weiwei
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Autere, Anton
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Leroux, Xavier
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Pakarinen, Lasse
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Alonso-Ramos, Carlos
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Säynätjoki, Antti
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Lipsanen, Harri
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Vivien, Laurent
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Cassan, Eric
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Sun, Zhipei
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Rönn, John
24338426-957a-4e0c-bef2-f2dc11d61efe
Zhang, Weiwei
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Autere, Anton
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Leroux, Xavier
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Pakarinen, Lasse
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Alonso-Ramos, Carlos
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Säynätjoki, Antti
74554a53-d043-4c84-9995-dba7ea8f28bc
Lipsanen, Harri
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Vivien, Laurent
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Cassan, Eric
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Sun, Zhipei
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Rönn, John, Zhang, Weiwei, Autere, Anton, Leroux, Xavier, Pakarinen, Lasse, Alonso-Ramos, Carlos, Säynätjoki, Antti, Lipsanen, Harri, Vivien, Laurent, Cassan, Eric and Sun, Zhipei (2019) Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides. Nature Communications, 10 (1), 1-9. (doi:10.1038/s41467-019-08369-w).

Record type: Article

Abstract

Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 ± 7.31 dB/cm and at least 52.4 ± 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.

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s41467-019-08369-w - Version of Record
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Accepted/In Press date: 29 December 2018
e-pub ahead of print date: 25 January 2019

Identifiers

Local EPrints ID: 427931
URI: https://eprints.soton.ac.uk/id/eprint/427931
PURE UUID: b938c932-44c4-4466-aef9-2a6d805e81bd

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Date deposited: 05 Feb 2019 17:30
Last modified: 21 Oct 2019 16:40

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Contributors

Author: John Rönn
Author: Weiwei Zhang
Author: Anton Autere
Author: Xavier Leroux
Author: Lasse Pakarinen
Author: Carlos Alonso-Ramos
Author: Antti Säynätjoki
Author: Harri Lipsanen
Author: Laurent Vivien
Author: Eric Cassan
Author: Zhipei Sun

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