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Tracking dark excitons with exciton polaritons in semiconductor microcavities

Tracking dark excitons with exciton polaritons in semiconductor microcavities
Tracking dark excitons with exciton polaritons in semiconductor microcavities

Dark excitons are of fundamental importance for a wide variety of processes in semiconductors but are difficult to investigate using optical techniques due to their weak interaction with light fields. We reveal and characterize dark excitons nonresonantly injected into a semiconductor microcavity structure containing InGaAs/GaAs quantum wells by a gated train of eight 100 fs pulses separated by 13 ns by monitoring their interactions with the bright lower polariton mode. We find a surprisingly long dark exciton lifetime of more than 20 ns, which is longer than the time delay between two consecutive pulses. This creates a memory effect that we clearly observe through the variation of the time-resolved transmission signal. We propose a rate equation model that provides a quantitative agreement with the experimental data.

0031-9007
Schmidt, D.
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Berger, B.
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Kahlert, M.
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Bayer, M.
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Schneider, C.
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Höfling, S.
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Sedov, E. S.
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Kavokin, A. V.
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Aßmann, M.
884b1cd5-34a1-40a8-9f60-bd1263fd2ea9
Schmidt, D.
20b61874-0e0e-4a40-b4f8-220e7cbf9a99
Berger, B.
cce2b705-e442-4625-9479-d463b0dd3827
Kahlert, M.
ab98425d-ecf4-41a7-8b25-269f9619f378
Bayer, M.
16cfef86-dcd4-49d0-a0d9-0b06f0d6d16a
Schneider, C.
2537e550-4f1a-43cd-877f-32d60888a673
Höfling, S.
46f0d11d-1c5a-4de9-a103-16b2686b4dda
Sedov, E. S.
09ed8f98-fb1e-44d5-a192-10b0c6541cd9
Kavokin, A. V.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Aßmann, M.
884b1cd5-34a1-40a8-9f60-bd1263fd2ea9

Schmidt, D., Berger, B., Kahlert, M., Bayer, M., Schneider, C., Höfling, S., Sedov, E. S., Kavokin, A. V. and Aßmann, M. (2019) Tracking dark excitons with exciton polaritons in semiconductor microcavities. Physical Review Letters, 122 (4), [047403]. (doi:10.1103/PhysRevLett.122.047403).

Record type: Article

Abstract

Dark excitons are of fundamental importance for a wide variety of processes in semiconductors but are difficult to investigate using optical techniques due to their weak interaction with light fields. We reveal and characterize dark excitons nonresonantly injected into a semiconductor microcavity structure containing InGaAs/GaAs quantum wells by a gated train of eight 100 fs pulses separated by 13 ns by monitoring their interactions with the bright lower polariton mode. We find a surprisingly long dark exciton lifetime of more than 20 ns, which is longer than the time delay between two consecutive pulses. This creates a memory effect that we clearly observe through the variation of the time-resolved transmission signal. We propose a rate equation model that provides a quantitative agreement with the experimental data.

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Tracking Dark Excitons with Exciton Polaritons in Semiconductor Microcavities - Accepted Manuscript
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Accepted/In Press date: 16 November 2018
e-pub ahead of print date: 1 February 2019

Identifiers

Local EPrints ID: 428445
URI: http://eprints.soton.ac.uk/id/eprint/428445
ISSN: 0031-9007
PURE UUID: 8e0132bc-d6ab-4556-a501-cb1ae941aacf

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Date deposited: 27 Feb 2019 17:30
Last modified: 25 Nov 2021 17:02

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Contributors

Author: D. Schmidt
Author: B. Berger
Author: M. Kahlert
Author: M. Bayer
Author: C. Schneider
Author: S. Höfling
Author: E. S. Sedov
Author: A. V. Kavokin
Author: M. Aßmann

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