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Silicon-on-insulator free-carrier injection modulators for the mid-infrared

Silicon-on-insulator free-carrier injection modulators for the mid-infrared
Silicon-on-insulator free-carrier injection modulators for the mid-infrared

Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach–Zehnder interferometer, achieving a V π L π of 0.052 V · mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.

0146-9592
915-918
Nedeljković, M.
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Littlejohns, C.G.
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Khokhar, A.Z.
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Banakar, M.
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Cao, W.
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Soler Penadés, J.
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Tran, D.T.
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Gardes, F.Y.
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Thomson, D.J.
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Reed, G.T.
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Wang, H.
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Mashanovich, G.Z.
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Nedeljković, M.
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Littlejohns, C.G.
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Khokhar, A.Z.
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Banakar, M.
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Cao, W.
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Soler Penadés, J.
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Tran, D.T.
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Gardes, F.Y.
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Thomson, D.J.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, H.
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Mashanovich, G.Z.
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Nedeljković, M., Littlejohns, C.G., Khokhar, A.Z., Banakar, M., Cao, W., Soler Penadés, J., Tran, D.T., Gardes, F.Y., Thomson, D.J., Reed, G.T., Wang, H. and Mashanovich, G.Z. (2019) Silicon-on-insulator free-carrier injection modulators for the mid-infrared. Optics Letters, 44 (4), 915-918. (doi:10.1364/OL.44.000915).

Record type: Article

Abstract

Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach–Zehnder interferometer, achieving a V π L π of 0.052 V · mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.

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Accepted/In Press date: 1 December 2018
e-pub ahead of print date: 7 December 2018
Published date: 15 February 2019

Identifiers

Local EPrints ID: 428508
URI: https://eprints.soton.ac.uk/id/eprint/428508
ISSN: 0146-9592
PURE UUID: ed5609ae-a39f-440b-b3ba-4b81c1f0b9e3
ORCID for W. Cao: ORCID iD orcid.org/0000-0003-1431-7060
ORCID for J. Soler Penadés: ORCID iD orcid.org/0000-0002-1706-8533

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Date deposited: 01 Mar 2019 17:30
Last modified: 02 Apr 2019 00:29

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