Silicon-on-insulator free-carrier injection modulators for the mid-infrared
Silicon-on-insulator free-carrier injection modulators for the mid-infrared
Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach–Zehnder interferometer, achieving a V
π
L
π
of 0.052 V · mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.
915-918
Nedeljković, M.
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Littlejohns, C.G.
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Khokhar, A.Z.
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Banakar, M.
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Cao, W.
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Soler Penadés, J.
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Tran, D.T.
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Gardes, F.Y.
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Thomson, D.J.
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Reed, G.T.
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Wang, H.
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Mashanovich, G.Z.
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15 February 2019
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Banakar, M.
ad56fc0a-728c-4abb-8be5-74318bb2758e
Cao, W.
5202fa2b-a471-45d4-84e9-9104dffdbbfc
Soler Penadés, J.
f18f3619-0d71-4547-95fd-dd38c37b7adb
Tran, D.T.
65bcfeb7-1864-4ad8-bdf3-71bd30006610
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, H.
192d70ff-f3fa-4adc-a5c0-f799412522c9
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Nedeljković, M., Littlejohns, C.G., Khokhar, A.Z., Banakar, M., Cao, W., Soler Penadés, J., Tran, D.T., Gardes, F.Y., Thomson, D.J., Reed, G.T., Wang, H. and Mashanovich, G.Z.
(2019)
Silicon-on-insulator free-carrier injection modulators for the mid-infrared.
Optics Letters, 44 (4), .
(doi:10.1364/OL.44.000915).
Abstract
Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach–Zehnder interferometer, achieving a V
π
L
π
of 0.052 V · mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.
Text
ol-44-4-915
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Accepted/In Press date: 1 December 2018
e-pub ahead of print date: 7 December 2018
Published date: 15 February 2019
Identifiers
Local EPrints ID: 428508
URI: http://eprints.soton.ac.uk/id/eprint/428508
ISSN: 0146-9592
PURE UUID: ed5609ae-a39f-440b-b3ba-4b81c1f0b9e3
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Date deposited: 01 Mar 2019 17:30
Last modified: 26 Apr 2024 17:27
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Contributors
Author:
A.Z. Khokhar
Author:
W. Cao
Author:
J. Soler Penadés
Author:
D.T. Tran
Author:
H. Wang
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