Study of dielectric coatings for broadband operation of surface-emitting semiconductor lasers
Study of dielectric coatings for broadband operation of surface-emitting semiconductor lasers
We investigate antireflection (AR) coating materials for two different operation lasing regimes requiring broad spectral bandwidth. We characterize high-power continuous-wave (CW) wavelength-tunable vertical-external-cavity surface-emitting semiconductor lasers and their passive mode-locking capabilities when using semiconductor saturable absorber mirrors. One laser gain design was investigated with different single dielectric layers as AR coatings. The dielectric coating materials used were SiO2 , Al2O3 , Ta2O5 , and TiO2 . The AR coating was designed to reduce pump reflection and increase the confinement factor of the microcavity. Average power of 4.6 W in CW and a total wavelength tuning range of 42 nm has been observed with the SiO2 -coated structure. The shortest pulse of 708 fs was also observed for the SiO2 -coated structure, with a corresponding CW wavelength tuning range of 36 nm.
752-756
Robin Head, C.
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Chen-Sverre, T.
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Woods, Jonathan
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Hein, Alexander
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Polanik, Markus
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Turnbull, Andrew P.
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Shaw, Edward A.
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Unger, Peter
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Tropper, Anne C.
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Apostolopoulos, Vasilis
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Robin Head, C.
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Chen-Sverre, T.
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Woods, Jonathan
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Hein, Alexander
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Polanik, Markus
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Turnbull, Andrew P.
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Shaw, Edward A.
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Unger, Peter
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Tropper, Anne C.
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Apostolopoulos, Vasilis
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Robin Head, C., Chen-Sverre, T., Woods, Jonathan, Hein, Alexander, Polanik, Markus, Turnbull, Andrew P., Shaw, Edward A., Unger, Peter, Tropper, Anne C. and Apostolopoulos, Vasilis
(2019)
Study of dielectric coatings for broadband operation of surface-emitting semiconductor lasers.
Journal of the Optical Society of America B: Optical Physics, 36 (3), .
(doi:10.1364/JOSAB.36.000752).
Abstract
We investigate antireflection (AR) coating materials for two different operation lasing regimes requiring broad spectral bandwidth. We characterize high-power continuous-wave (CW) wavelength-tunable vertical-external-cavity surface-emitting semiconductor lasers and their passive mode-locking capabilities when using semiconductor saturable absorber mirrors. One laser gain design was investigated with different single dielectric layers as AR coatings. The dielectric coating materials used were SiO2 , Al2O3 , Ta2O5 , and TiO2 . The AR coating was designed to reduce pump reflection and increase the confinement factor of the microcavity. Average power of 4.6 W in CW and a total wavelength tuning range of 42 nm has been observed with the SiO2 -coated structure. The shortest pulse of 708 fs was also observed for the SiO2 -coated structure, with a corresponding CW wavelength tuning range of 36 nm.
Text
josab-36-3-752
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Accepted/In Press date: 12 January 2019
e-pub ahead of print date: 15 January 2019
Identifiers
Local EPrints ID: 429051
URI: http://eprints.soton.ac.uk/id/eprint/429051
ISSN: 0740-3224
PURE UUID: 11a0ecab-e7a1-41b9-acef-e5049e09c876
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Date deposited: 20 Mar 2019 17:30
Last modified: 18 Mar 2024 03:07
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Contributors
Author:
C. Robin Head
Author:
T. Chen-Sverre
Author:
Jonathan Woods
Author:
Alexander Hein
Author:
Markus Polanik
Author:
Andrew P. Turnbull
Author:
Edward A. Shaw
Author:
Peter Unger
Author:
Anne C. Tropper
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