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Cohesive zone modelling of wafer bonding and fracture: effect of patterning and toughness variations

Kubair, D.V. and Spearing, S.M. (2006) Cohesive zone modelling of wafer bonding and fracture: effect of patterning and toughness variations Journal of Physics D: Applied Physics, 39, (6), pp. 1050-1057. (doi:10.1088/0022-3727/39/6/009).

Record type: Article


Direct wafer bonding has increasingly become popular in the manufacture of microelectromechanical systems and semiconductor microelectronics components. The success of the bonding process is controlled by variables such as wafer flatness and surface preparation. In order to understand the effects of these variables, spontaneous planar crack propagation simulations were performed using the spectral scheme in conjunction with a cohesive zone model. The fracture-toughness on the bond interface is varied to simulate the effect of surface roughness (nanotopography) and patterning. Our analysis indicated that the energetics of crack propagation is sensitive to the local surface property variations. The patterned wafers are tougher (well bonded) than the unpatterned ones of the same average fracture-toughness.

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Published date: 2006
Organisations: Engineering Mats & Surface Engineerg Gp


Local EPrints ID: 42957
ISSN: 0022-3727
PURE UUID: a60f328d-2412-456e-a4da-83e07f60e586

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Date deposited: 08 Jan 2007
Last modified: 17 Jul 2017 15:20

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Author: D.V. Kubair
Author: S.M. Spearing

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