Ultra-sharp asymmetric Fano-like resonance spectrum on Si photonic platform
Ultra-sharp asymmetric Fano-like resonance spectrum on Si photonic platform
In this paper, we report the generation of an ultra-sharp asymmetric resonance spectrum through Fano-like interference. This generation is accomplished by weakly coupling a high-quality factor (Q factor) Fabry–Pérot (FP) cavity and a low-Q factor FP cavity through evanescent waves. The high-Q FP cavity is formed by Sagnac loop mirrors, whilst the low-Q one is built by partially transmitting Sagnac loop reflectors. The working principle has been analytically established and numerically modelled by using temporal coupled-mode-theory (CMT), and verified using a prototype device fabricated on the 340 nm silicon-on-insulator (SOI) platform, patterned by deep ultraviolet (DUV) lithography. Pronounced asymmetric resonances with slopes up to 0.77 dB/pm have been successfully measured, which, to the best of our knowledge, is higher than the results reported in state-of-the-art devices in on-chip integrated Si photonic studies. The established theoretical analysis method can provide excellent design guidelines for devices with Fano-like resonances. The design principle can be applied to ultra-sensitive sensing, ultra-high extinction ratio switching, and more applications.
7365-7372
Du, H.
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Zhang, W.
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Littlejohns, C.G.
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Stanković, S.
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Yan, X.
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Tran, D.T.
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Sharp, G. J.
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Gardes, F.Y.
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Thomson, D.J.
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Sorel, M.
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Mashanovich, G.Z.
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Reed, G.T.
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Du, H.
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Zhang, W.
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Littlejohns, C.G.
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Stanković, S.
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Yan, X.
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Tran, D.T.
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Sharp, G. J.
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Gardes, F.Y.
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Thomson, D.J.
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Sorel, M.
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Mashanovich, G.Z.
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Reed, G.T.
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Du, H., Zhang, W., Littlejohns, C.G., Stanković, S., Yan, X., Tran, D.T., Sharp, G. J., Gardes, F.Y., Thomson, D.J., Sorel, M., Mashanovich, G.Z. and Reed, G.T.
(2019)
Ultra-sharp asymmetric Fano-like resonance spectrum on Si photonic platform.
Optics Express, 27 (5), .
(doi:10.1364/OE.27.007365).
Abstract
In this paper, we report the generation of an ultra-sharp asymmetric resonance spectrum through Fano-like interference. This generation is accomplished by weakly coupling a high-quality factor (Q factor) Fabry–Pérot (FP) cavity and a low-Q factor FP cavity through evanescent waves. The high-Q FP cavity is formed by Sagnac loop mirrors, whilst the low-Q one is built by partially transmitting Sagnac loop reflectors. The working principle has been analytically established and numerically modelled by using temporal coupled-mode-theory (CMT), and verified using a prototype device fabricated on the 340 nm silicon-on-insulator (SOI) platform, patterned by deep ultraviolet (DUV) lithography. Pronounced asymmetric resonances with slopes up to 0.77 dB/pm have been successfully measured, which, to the best of our knowledge, is higher than the results reported in state-of-the-art devices in on-chip integrated Si photonic studies. The established theoretical analysis method can provide excellent design guidelines for devices with Fano-like resonances. The design principle can be applied to ultra-sensitive sensing, ultra-high extinction ratio switching, and more applications.
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oe-27-5-7365
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Accepted/In Press date: 9 February 2019
e-pub ahead of print date: 27 February 2019
Identifiers
Local EPrints ID: 430053
URI: http://eprints.soton.ac.uk/id/eprint/430053
ISSN: 1094-4087
PURE UUID: b3c9a813-1d36-4eeb-bbcd-468c12f338d5
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Date deposited: 11 Apr 2019 16:30
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
H. Du
Author:
W. Zhang
Author:
C.G. Littlejohns
Author:
S. Stanković
Author:
X. Yan
Author:
D.T. Tran
Author:
G. J. Sharp
Author:
F.Y. Gardes
Author:
D.J. Thomson
Author:
M. Sorel
Author:
G.Z. Mashanovich
Author:
G.T. Reed
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