Rashba spin-splitting of electrons in asymmetric quantum wells
Rashba spin-splitting of electrons in asymmetric quantum wells
We report a comparison of conduction electron spin-splitting in III-V quantum wells caused by asymmetric band edges with that due to applied electric field. Measurements in GaAs/AlGaAs quantum wells and calculations on a range of heterostructures, both symmetric and asymmetric, lead to the conclusion that in a heterostructure with nearly “isomorphous” band edges (i.e., with conduction and valence band-edge potentials related by a constant factor, exemplified by GaAs/AlGaAs) spin splittings will be unmeasurably small even in a highly asymmetric structure. Application of an external electric field or the presence of a Hartree potential gradient in the system will generally break isomorphism and therefore produce a significant spin splitting.
Eldridge, P. S.
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Leyland, W. J. H.
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Lagoudakis, P. G.
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Harley, R. T.
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Phillips, R. T.
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Winkler, R.
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Henini, M.
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Taylor, D.
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26 July 2010
Eldridge, P. S.
62739b3b-14eb-4a0b-8e6d-4d4f24cc836d
Leyland, W. J. H.
e6a7d9aa-be90-41ef-90db-bc411363b84b
Lagoudakis, P. G.
ea50c228-f006-4edf-8459-60015d961bbf
Harley, R. T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Phillips, R. T.
d23a75c7-986b-4a83-87e4-e22abae5ade2
Winkler, R.
7f05c0ba-7af1-48db-8521-8b3ef1208743
Henini, M.
dffaac17-caab-4a18-9eb6-c858d8bb1ed2
Taylor, D.
cfa866c4-3420-44a6-9b2b-23b25b699dd0
Eldridge, P. S., Leyland, W. J. H., Lagoudakis, P. G., Harley, R. T., Phillips, R. T., Winkler, R., Henini, M. and Taylor, D.
(2010)
Rashba spin-splitting of electrons in asymmetric quantum wells.
Physical Review B, 82 (4).
(doi:10.1103/PhysRevB.82.045317).
Abstract
We report a comparison of conduction electron spin-splitting in III-V quantum wells caused by asymmetric band edges with that due to applied electric field. Measurements in GaAs/AlGaAs quantum wells and calculations on a range of heterostructures, both symmetric and asymmetric, lead to the conclusion that in a heterostructure with nearly “isomorphous” band edges (i.e., with conduction and valence band-edge potentials related by a constant factor, exemplified by GaAs/AlGaAs) spin splittings will be unmeasurably small even in a highly asymmetric structure. Application of an external electric field or the presence of a Hartree potential gradient in the system will generally break isomorphism and therefore produce a significant spin splitting.
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Published date: 26 July 2010
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Local EPrints ID: 430491
URI: http://eprints.soton.ac.uk/id/eprint/430491
ISSN: 1098-0121
PURE UUID: f32c74c1-567e-472c-9d61-2b6476d6893b
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Date deposited: 02 May 2019 16:30
Last modified: 16 Mar 2024 01:33
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Author:
P. S. Eldridge
Author:
W. J. H. Leyland
Author:
P. G. Lagoudakis
Author:
R. T. Harley
Author:
R. T. Phillips
Author:
R. Winkler
Author:
M. Henini
Author:
D. Taylor
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