Resonance energy transfer from PbS colloidal quantum dots to bulk silicon: the road to hybrid photovoltaics
Resonance energy transfer from PbS colloidal quantum dots to bulk silicon: the road to hybrid photovoltaics
Semiconductor Quantum Dots (QDs) are promising materials for photovoltaic applications because they can be engineered to absorb light from visible to near infrared and single absorbed photons can generate multiple excitons. However, these materials suffer from low carrier mobility, which severely limits the prospects of efficient charge extraction and carrier transport. We take advantage of the optical properties of QDs and overcome their drawback by using a hybrid photovoltaic device. This photovoltaic configuration exploits the absorption of solar photons in the QDs and the transfer of excitons from the QDs to a silicon p-n junction. We study the Resonance Energy Transfer (RET) mechanism to inject excitons from the QDs into the depletion layer of a silicon p-n junction. Lead sulphide (PbS) nanocrystals are deposited onto the silicon substrate and the efficiency of Resonance Energy Transfer (RET) from the PbS nanoparticles to bulk silicon is investigated. We study the efficiency of this transfer channel between the PbS nanocrystals and silicon by varying their separation distance. These results demonstrate RET from colloidal quantum dots to bulk silicon. Temperature measurements are also presented and show that the RET efficiency is as high as 44% at room temperature. Such a hybrid photovoltaic device makes a potentially inexpensive scheme for achieving high-efficiency and low-cost solar-cell platforms.
Hybrid photovoltaics, quantum dots, energy transfer, lead sulfide, silicon
Andreakou, P.
9a6d6dea-bb9a-46e1-b50b-b200bcfd5b6c
Brossard, M.
8081f6a5-50c8-419c-9c97-1fccbee48bda
Bernechea, M.
2c5a44ab-32fe-4d11-9a4d-3311c5979dab
Konstantatos, G.
381216f1-ceee-4a97-8f05-9097854202b9
Lagoudakis, P.
ea50c228-f006-4edf-8459-60015d961bbf
2012
Andreakou, P.
9a6d6dea-bb9a-46e1-b50b-b200bcfd5b6c
Brossard, M.
8081f6a5-50c8-419c-9c97-1fccbee48bda
Bernechea, M.
2c5a44ab-32fe-4d11-9a4d-3311c5979dab
Konstantatos, G.
381216f1-ceee-4a97-8f05-9097854202b9
Lagoudakis, P.
ea50c228-f006-4edf-8459-60015d961bbf
Andreakou, P., Brossard, M., Bernechea, M., Konstantatos, G. and Lagoudakis, P.
(2012)
Resonance energy transfer from PbS colloidal quantum dots to bulk silicon: the road to hybrid photovoltaics.
Proceedings of SPIE, 8256.
(doi:10.1117/12.908357).
Abstract
Semiconductor Quantum Dots (QDs) are promising materials for photovoltaic applications because they can be engineered to absorb light from visible to near infrared and single absorbed photons can generate multiple excitons. However, these materials suffer from low carrier mobility, which severely limits the prospects of efficient charge extraction and carrier transport. We take advantage of the optical properties of QDs and overcome their drawback by using a hybrid photovoltaic device. This photovoltaic configuration exploits the absorption of solar photons in the QDs and the transfer of excitons from the QDs to a silicon p-n junction. We study the Resonance Energy Transfer (RET) mechanism to inject excitons from the QDs into the depletion layer of a silicon p-n junction. Lead sulphide (PbS) nanocrystals are deposited onto the silicon substrate and the efficiency of Resonance Energy Transfer (RET) from the PbS nanoparticles to bulk silicon is investigated. We study the efficiency of this transfer channel between the PbS nanocrystals and silicon by varying their separation distance. These results demonstrate RET from colloidal quantum dots to bulk silicon. Temperature measurements are also presented and show that the RET efficiency is as high as 44% at room temperature. Such a hybrid photovoltaic device makes a potentially inexpensive scheme for achieving high-efficiency and low-cost solar-cell platforms.
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Published date: 2012
Keywords:
Hybrid photovoltaics, quantum dots, energy transfer, lead sulfide, silicon
Identifiers
Local EPrints ID: 430542
URI: http://eprints.soton.ac.uk/id/eprint/430542
ISSN: 0277-786X
PURE UUID: c2db7804-9b09-4aca-b98e-004eb97d0a67
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Date deposited: 03 May 2019 16:30
Last modified: 16 Mar 2024 01:33
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Contributors
Author:
P. Andreakou
Author:
M. Brossard
Author:
M. Bernechea
Author:
G. Konstantatos
Author:
P. Lagoudakis
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