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Silicon precipitation via photoinduced reaction using femtosecond laser

Silicon precipitation via photoinduced reaction using femtosecond laser
Silicon precipitation via photoinduced reaction using femtosecond laser
Silicon precipitation inside a glass is an important technique for silicon photonics. We successfully precipitated silicon inside silicate glasses containing an Al metal film using femtosecond laser irradiation. First, the Al-inserted sandwiched glass was fabricated by the direct bonding method. The results of a tensile test indicated that the adhesive strength of the sandwich structure reached approximately 4 MPa. Next, femtosecond laser pulses were focused at the Al/glass interface in the sandwich structure. A transmission electron microscopy photograph at the focus of the laser showed that the Al particles were dispersed into the glass substrate to a depth of ∼2 μm from the initial Al layer. In addition, Raman spectra indicated that silicon had formed at the interface between the glass and Al film after the laser irradiation. The morphology or the particle size of the precipitated silicon was successfully modified by changing the repetition rate or the pulse energy of the laser.
Silicon, Femtosecond Laser, Direct Bonding, Photo-Induced Reaction, Raman Spectroscopy
1533-4880
10087-10092
Nishimura, Masakazu
bde2f40c-9271-46c6-8d16-cd3af30ee5d2
Kanehira, Shingo
2d91bcd3-d32f-450e-bab2-b220d6acf183
Sakakura, Masaaki
3bb15bbd-d590-4cba-ab5a-862dc7acd054
Shimotsuma, Yasuhiko
0664279b-def2-41d4-a5ec-207ce02013a7
Miura, Kiyotaka
5dbc9159-ace0-4dd9-b18d-36f87ae78c47
Hirao, Kazuyuki
5cc5061d-6217-49ae-bc92-ff5b72b9c6c2
Nishimura, Masakazu
bde2f40c-9271-46c6-8d16-cd3af30ee5d2
Kanehira, Shingo
2d91bcd3-d32f-450e-bab2-b220d6acf183
Sakakura, Masaaki
3bb15bbd-d590-4cba-ab5a-862dc7acd054
Shimotsuma, Yasuhiko
0664279b-def2-41d4-a5ec-207ce02013a7
Miura, Kiyotaka
5dbc9159-ace0-4dd9-b18d-36f87ae78c47
Hirao, Kazuyuki
5cc5061d-6217-49ae-bc92-ff5b72b9c6c2

Nishimura, Masakazu, Kanehira, Shingo, Sakakura, Masaaki, Shimotsuma, Yasuhiko, Miura, Kiyotaka and Hirao, Kazuyuki (2011) Silicon precipitation via photoinduced reaction using femtosecond laser. Journal of Nanoscience and Nanotechnology, 11 (11), 10087-10092. (doi:10.1166/jnn.2011.4988).

Record type: Article

Abstract

Silicon precipitation inside a glass is an important technique for silicon photonics. We successfully precipitated silicon inside silicate glasses containing an Al metal film using femtosecond laser irradiation. First, the Al-inserted sandwiched glass was fabricated by the direct bonding method. The results of a tensile test indicated that the adhesive strength of the sandwich structure reached approximately 4 MPa. Next, femtosecond laser pulses were focused at the Al/glass interface in the sandwich structure. A transmission electron microscopy photograph at the focus of the laser showed that the Al particles were dispersed into the glass substrate to a depth of ∼2 μm from the initial Al layer. In addition, Raman spectra indicated that silicon had formed at the interface between the glass and Al film after the laser irradiation. The morphology or the particle size of the precipitated silicon was successfully modified by changing the repetition rate or the pulse energy of the laser.

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More information

Published date: November 2011
Additional Information: No Southampton authors at time of publication
Keywords: Silicon, Femtosecond Laser, Direct Bonding, Photo-Induced Reaction, Raman Spectroscopy

Identifiers

Local EPrints ID: 431159
URI: http://eprints.soton.ac.uk/id/eprint/431159
ISSN: 1533-4880
PURE UUID: a670abee-f98c-4be0-be9f-07c3fc802661

Catalogue record

Date deposited: 24 May 2019 16:30
Last modified: 16 Mar 2024 01:56

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Contributors

Author: Masakazu Nishimura
Author: Shingo Kanehira
Author: Masaaki Sakakura
Author: Yasuhiko Shimotsuma
Author: Kiyotaka Miura
Author: Kazuyuki Hirao

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