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Dataset for the paper "Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 µm"

University of Southampton – ZIPN 

Dataset creators: Tiantian Li, Milos Nedeljkovic (m.nedeljkovic@soton.ac.uk), Nannicha Hattasan, Wei Cao, Zhibo Qu, Callum G. Littlejohns, Jordi Soler Penades, Lorenzo Mastronardi, Vinita Mittal, Daniel Benedikovic, David J. Thomson, Frederic Y. Gardes, Hequan Wu, Zhiping Zhou, and Goran Z. Mashanovich

The excel file contains experimental data for the paper, with each Excel sheet showing the data from a different graph. In particular:
Fig. 6. (a) The modulation depth as a function of the wavelength, under different bias conditions.
Fig. 6. (b) Modulation depth as a function of current at a wavelength of 3765 nm. Inset: current-voltage device characteristic.
Fig. 6. (b) Inset: Current-voltage device characteristic
Fig. 7. (a) The optical spectrum of the MZM under several DC voltages. the spectral transmission is normalized to the highest transmission, as seen through the device (so that the offset of transmission from zero does not represent the insertion loss).
Fig. 7. (b) Phase shift versus current of the MZM.
Fig. 8. (a) Eye diagram measured at 60 MHz for EAM.
Fig. 8. (b) Eye diagram measured at 60 MHz for EAM.
Fig. 10. (a) Extinction ratio as a function of the applied voltage for 2 mm-long EAM operating at a wavelength of 8 µm.
Fig. 10. (a) Inset: Current per unit length versus voltage curves at a wavelength of 8 µm (2 mm-long diode) and of 3.8 µm (1 mm-long diode) EAM devices with the same 8 µm contact separation.
Fig. 10. (b) Absorption coefficient versus current per unit PIN diode length at a wavelength of 8 µm (2 mm-long diode) and of 3.8 µm (1 mm-long diode) EAM devices with the same contact separation.


Date of data collection: from November 2015 - December 2018
Information about geographic location of data collection: University of
Southampton, U.K.
Date that the file was created: May 2019