The University of Southampton
University of Southampton Institutional Repository

Total dose radiation hardening of MOS transistors by fluorine implantation

Total dose radiation hardening of MOS transistors by fluorine implantation
Total dose radiation hardening of MOS transistors by fluorine implantation

Total ionizing dose effects are predominantly due to hole traps at the Si/SiO 2 interface at the shallow trench isolation (STI) and buried oxide. Here we show that Fluorine ion implantation is capable to fully passivate those traps such that negligible threshold shift is discernible in NMOS transistors radiated up to a maximum dose of 1MRad (Si). H-gate transistor were designed and fabricated using thin gate oxide, source drain pull back and ion implanted Fluorine to address radiation effects in the gate oxide, STI and buried oxides respectively. The transistors hardness was tested using gamma radiation from a Co60 source. Transistors without fluorine show a threshold voltage shifts of up to 350mV. Fluorine doped transistors show negligible threshold shifts up to the maximum dose.

radiation hardness, total ionising dose
Institute of Electrical and Electronics Engineers Inc.
Shaw, Chris
76d8effd-a5f7-49ea-aa53-922c83edaf3a
Potter, Kenneth
bf204443-941c-4e35-ae89-2cb8f28fa1aa
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Redman-White, Bill
d5376167-c925-460f-8e9c-13bffda8e0bf
Shaw, Chris
76d8effd-a5f7-49ea-aa53-922c83edaf3a
Potter, Kenneth
bf204443-941c-4e35-ae89-2cb8f28fa1aa
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Redman-White, Bill
d5376167-c925-460f-8e9c-13bffda8e0bf

Shaw, Chris, Potter, Kenneth, Morgan, Katrina, Ashburn, Peter, De Groot, Kees and Redman-White, Bill (2019) Total dose radiation hardening of MOS transistors by fluorine implantation. In 2017 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017. Institute of Electrical and Electronics Engineers Inc.. (doi:10.1109/RADECS.2017.8696125).

Record type: Conference or Workshop Item (Paper)

Abstract

Total ionizing dose effects are predominantly due to hole traps at the Si/SiO 2 interface at the shallow trench isolation (STI) and buried oxide. Here we show that Fluorine ion implantation is capable to fully passivate those traps such that negligible threshold shift is discernible in NMOS transistors radiated up to a maximum dose of 1MRad (Si). H-gate transistor were designed and fabricated using thin gate oxide, source drain pull back and ion implanted Fluorine to address radiation effects in the gate oxide, STI and buried oxides respectively. The transistors hardness was tested using gamma radiation from a Co60 source. Transistors without fluorine show a threshold voltage shifts of up to 350mV. Fluorine doped transistors show negligible threshold shifts up to the maximum dose.

Full text not available from this repository.

More information

Published date: 22 April 2019
Venue - Dates: 17th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2017, Geneva, Switzerland, 2017-10-02 - 2017-10-06
Keywords: radiation hardness, total ionising dose

Identifiers

Local EPrints ID: 431498
URI: https://eprints.soton.ac.uk/id/eprint/431498
PURE UUID: 8c8e828b-9285-4074-9ed3-3f01599ad7c3
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 06 Jun 2019 16:30
Last modified: 20 Jul 2019 01:05

Export record

Altmetrics

Contributors

Author: Chris Shaw
Author: Kenneth Potter
Author: Katrina Morgan ORCID iD
Author: Peter Ashburn
Author: Kees De Groot ORCID iD
Author: Bill Redman-White

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of https://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×