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56 Gb/s Si/GeSi optical modulator

56 Gb/s Si/GeSi optical modulator
56 Gb/s Si/GeSi optical modulator

We present experimental measurements of an EAM modulator developed on an 800 nm SOI platform working at 1566 nm with dynamic ER of 5.2 dB at 56 Gb/s, EO bandwidth of 56 GHz and power consumption of 44 fJ/bit.

IEEE
Mastronardi, L.
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Banakar, M.
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Khokhar, A.Z.
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Hattasan, N.
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Rutirawut, T.
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Domínguez Bucio, T.
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Grabska, K.M.
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Littlejohns, C.
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Bazin, A.
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Mashanovich, G.
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Gardes, F.Y.
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Mastronardi, L.
5f46303c-8516-4038-bb3f-8720a3b28d25
Banakar, M.
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Hattasan, N.
4f163cbe-eaaa-4771-82c5-af34c9c97fe9
Rutirawut, T.
e7350fb8-f14f-4d5b-ae8c-bc02b2132219
Domínguez Bucio, T.
83b57799-c566-473c-9b53-92e9c50b4287
Grabska, K.M.
5f82b736-08ad-4ddb-9f6a-01eea5f9975f
Littlejohns, C.
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Bazin, A.
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Mashanovich, G.
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Gardes, F.Y.
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Mastronardi, L., Banakar, M., Khokhar, A.Z., Hattasan, N., Rutirawut, T., Domínguez Bucio, T., Grabska, K.M., Littlejohns, C., Bazin, A., Mashanovich, G. and Gardes, F.Y. (2019) 56 Gb/s Si/GeSi optical modulator. In 2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2018). IEEE..

Record type: Conference or Workshop Item (Paper)

Abstract

We present experimental measurements of an EAM modulator developed on an 800 nm SOI platform working at 1566 nm with dynamic ER of 5.2 dB at 56 Gb/s, EO bandwidth of 56 GHz and power consumption of 44 fJ/bit.

Full text not available from this repository.

More information

Published date: 25 April 2019
Venue - Dates: 2018 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2018), Wanchai, Hong Kong, 2018-07-29 - 2018-08-03

Identifiers

Local EPrints ID: 431500
URI: https://eprints.soton.ac.uk/id/eprint/431500
PURE UUID: 1d96e4a9-01aa-46ed-bfa2-e04d08a958be
ORCID for L. Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for T. Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

Catalogue record

Date deposited: 06 Jun 2019 16:30
Last modified: 30 Nov 2019 01:27

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