"Modeling memristive biosensors"
"Modeling memristive biosensors"
In the present work, a computational study is carried out investigating the relationship between the biosensing and the electrical characteristics of two-terminal Schottky-barrier silicon nanowire devices. The model suggested successfully reproduces computationally the experimentally obtained electrical behavior of the devices prior to and after the surface bio-modification. Throughout modeling and simulations, it is confirmed that the nanofabricated devices present electrical behavior fully equivalent to that of a memristor device, according to literature. Furthermore, the model introduced successfully reproduces computationally the voltage gap appearing in the current to voltage characteristics for nanowire devices with bio-modified surface. Overall, the present study confirms the implication of the memristive effect for bio sensing applications, therefore demonstrating the Memristive Biosensors.
Biosensor, Memristor, Schottky barrier, Silicon nanowire
Tzouvadaki, Ioulia
a1025ec1-7606-453d-bc71-1f732a4c1f78
Puppo, Francesca
8e2bdc21-71ec-4625-bf7c-046c80fbd2f3
Doucey, Marie Agnes
03b94196-bd10-4b32-853b-e6ac44cc065c
De Micheli, Giovanni
23af8e38-a795-4edf-b551-9094fdb781e0
Carrara, Sandro
0001b4c5-1f62-4789-b0e9-5a187f58b893
31 December 2015
Tzouvadaki, Ioulia
a1025ec1-7606-453d-bc71-1f732a4c1f78
Puppo, Francesca
8e2bdc21-71ec-4625-bf7c-046c80fbd2f3
Doucey, Marie Agnes
03b94196-bd10-4b32-853b-e6ac44cc065c
De Micheli, Giovanni
23af8e38-a795-4edf-b551-9094fdb781e0
Carrara, Sandro
0001b4c5-1f62-4789-b0e9-5a187f58b893
Tzouvadaki, Ioulia, Puppo, Francesca, Doucey, Marie Agnes, De Micheli, Giovanni and Carrara, Sandro
(2015)
"Modeling memristive biosensors".
In 2015 IEEE SENSORS - Proceedings.
IEEE..
(doi:10.1109/ICSENS.2015.7370572).
Record type:
Conference or Workshop Item
(Paper)
Abstract
In the present work, a computational study is carried out investigating the relationship between the biosensing and the electrical characteristics of two-terminal Schottky-barrier silicon nanowire devices. The model suggested successfully reproduces computationally the experimentally obtained electrical behavior of the devices prior to and after the surface bio-modification. Throughout modeling and simulations, it is confirmed that the nanofabricated devices present electrical behavior fully equivalent to that of a memristor device, according to literature. Furthermore, the model introduced successfully reproduces computationally the voltage gap appearing in the current to voltage characteristics for nanowire devices with bio-modified surface. Overall, the present study confirms the implication of the memristive effect for bio sensing applications, therefore demonstrating the Memristive Biosensors.
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More information
Published date: 31 December 2015
Venue - Dates:
14th IEEE SENSORS, , Busan, Korea, Republic of, 2015-11-01 - 2015-11-04
Keywords:
Biosensor, Memristor, Schottky barrier, Silicon nanowire
Identifiers
Local EPrints ID: 431530
URI: http://eprints.soton.ac.uk/id/eprint/431530
PURE UUID: 197227b8-dc3d-409f-bf5e-8fd75b279d76
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Date deposited: 07 Jun 2019 16:30
Last modified: 16 Mar 2024 02:07
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Contributors
Author:
Ioulia Tzouvadaki
Author:
Francesca Puppo
Author:
Marie Agnes Doucey
Author:
Giovanni De Micheli
Author:
Sandro Carrara
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