Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm
Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm
We report mid-infrared Ge-on-Si waveguide based PIN diode modulators operating at wavelengths of 3.8 μm and 8 μm. Fabricated 1 mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1 mm-long Mach-Zehnder modulator has a Vπ·L of 0.47 V·cm. Driven by a 2.5 Vpp RF signal, 60 MHz On-Off Keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
828-836
Li, Tiantian
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Nedeljković, Miloš
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Hattasan, Nannicha
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Cao, Wei
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Qu, Zhibo
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Littlejohns, Callum
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Soler Penadés, Jordi
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Mastronardi, Lorenzo
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Mittal, Vinita
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Benedikovic, Daniel
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Thomson, David J.
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Gardes, Frederic Y.
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Wu, Hequan
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Zhou, Zhiping
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Mashanovich, Goran
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August 2019
Li, Tiantian
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Nedeljković, Miloš
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Hattasan, Nannicha
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Cao, Wei
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Qu, Zhibo
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Littlejohns, Callum
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Soler Penadés, Jordi
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Mastronardi, Lorenzo
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Mittal, Vinita
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Benedikovic, Daniel
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Thomson, David J.
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Gardes, Frederic Y.
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Wu, Hequan
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Zhou, Zhiping
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Mashanovich, Goran
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Li, Tiantian, Nedeljković, Miloš, Hattasan, Nannicha, Cao, Wei, Qu, Zhibo, Littlejohns, Callum, Soler Penadés, Jordi, Mastronardi, Lorenzo, Mittal, Vinita, Benedikovic, Daniel, Thomson, David J., Gardes, Frederic Y., Wu, Hequan, Zhou, Zhiping and Mashanovich, Goran
(2019)
Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm.
Photonics Research, 7 (8), .
(doi:10.1364/PRJ.7.000828).
Abstract
We report mid-infrared Ge-on-Si waveguide based PIN diode modulators operating at wavelengths of 3.8 μm and 8 μm. Fabricated 1 mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1 mm-long Mach-Zehnder modulator has a Vπ·L of 0.47 V·cm. Driven by a 2.5 Vpp RF signal, 60 MHz On-Off Keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
Text
Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 um
- Accepted Manuscript
Text
prj-7-8-828
- Version of Record
More information
Accepted/In Press date: 27 May 2019
e-pub ahead of print date: 28 May 2019
Published date: August 2019
Identifiers
Local EPrints ID: 431548
URI: http://eprints.soton.ac.uk/id/eprint/431548
ISSN: 2327-9125
PURE UUID: a7565a92-c3e5-4d5f-906a-1db5a4abb0c3
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Date deposited: 07 Jun 2019 16:30
Last modified: 14 Dec 2024 05:02
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Contributors
Author:
Tiantian Li
Author:
Miloš Nedeljković
Author:
Nannicha Hattasan
Author:
Wei Cao
Author:
Zhibo Qu
Author:
Callum Littlejohns
Author:
Jordi Soler Penadés
Author:
Lorenzo Mastronardi
Author:
Vinita Mittal
Author:
Daniel Benedikovic
Author:
David J. Thomson
Author:
Frederic Y. Gardes
Author:
Hequan Wu
Author:
Zhiping Zhou
Author:
Goran Mashanovich
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