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Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm

Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm
Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm
We report mid-infrared Ge-on-Si waveguide based PIN diode modulators operating at wavelengths of 3.8 μm and 8 μm. Fabricated 1 mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1 mm-long Mach-Zehnder modulator has a Vπ·L of 0.47 V·cm. Driven by a 2.5 Vpp RF signal, 60 MHz On-Off Keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.
2327-9125
828-836
Li, Tiantian
8543c0da-cbf4-4acc-904f-d7d0ec772ec2
Nedeljković, Milos
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Hattasan, Nannicha
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Cao, Wei
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Qu, Zhibo
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Littlejohns, Callum
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Soler Penadés, Jordi
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Mastronardi, Lorenzo
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Mittal, Vinita
fd5ee9dd-7770-416f-8f47-50ca158b39b0
Benedikovic, Daniel
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Thomson, David J.
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Gardes, Frederic Y.
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Wu, Hequan
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Zhou, Zhiping
ede65d1a-e058-4e7f-8960-ca6b3a248511
Mashanovich, Goran
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Li, Tiantian
8543c0da-cbf4-4acc-904f-d7d0ec772ec2
Nedeljković, Milos
b64e21c2-1b95-479d-a35c-3456dff8c796
Hattasan, Nannicha
4f163cbe-eaaa-4771-82c5-af34c9c97fe9
Cao, Wei
5202fa2b-a471-45d4-84e9-9104dffdbbfc
Qu, Zhibo
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Littlejohns, Callum
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Soler Penadés, Jordi
f18f3619-0d71-4547-95fd-dd38c37b7adb
Mastronardi, Lorenzo
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Mittal, Vinita
fd5ee9dd-7770-416f-8f47-50ca158b39b0
Benedikovic, Daniel
1ae5b7b3-770d-4919-8581-f37180e9d830
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Wu, Hequan
d4a1427f-843e-422b-ba34-af4429cf9f4c
Zhou, Zhiping
ede65d1a-e058-4e7f-8960-ca6b3a248511
Mashanovich, Goran
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Li, Tiantian, Nedeljković, Milos, Hattasan, Nannicha, Cao, Wei, Qu, Zhibo, Littlejohns, Callum, Soler Penadés, Jordi, Mastronardi, Lorenzo, Mittal, Vinita, Benedikovic, Daniel, Thomson, David J., Gardes, Frederic Y., Wu, Hequan, Zhou, Zhiping and Mashanovich, Goran (2019) Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm. Photonics Research, 7 (8), 828-836. (doi:10.1364/PRJ.7.000828).

Record type: Article

Abstract

We report mid-infrared Ge-on-Si waveguide based PIN diode modulators operating at wavelengths of 3.8 μm and 8 μm. Fabricated 1 mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1 mm-long Mach-Zehnder modulator has a Vπ·L of 0.47 V·cm. Driven by a 2.5 Vpp RF signal, 60 MHz On-Off Keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.

Text
Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 um - Accepted Manuscript
Restricted to Repository staff only until 28 May 2020.
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Accepted/In Press date: 27 May 2019
e-pub ahead of print date: 28 May 2019
Published date: August 2019

Identifiers

Local EPrints ID: 431548
URI: https://eprints.soton.ac.uk/id/eprint/431548
ISSN: 2327-9125
PURE UUID: a7565a92-c3e5-4d5f-906a-1db5a4abb0c3
ORCID for Milos Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911
ORCID for Jordi Soler Penadés: ORCID iD orcid.org/0000-0002-1706-8533
ORCID for Lorenzo Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for Vinita Mittal: ORCID iD orcid.org/0000-0003-4836-5327

Catalogue record

Date deposited: 07 Jun 2019 16:30
Last modified: 03 Dec 2019 01:35

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