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High-Q/V photonic crystal cavities and QED analysis in 3C-SiC

High-Q/V photonic crystal cavities and QED analysis in 3C-SiC
High-Q/V photonic crystal cavities and QED analysis in 3C-SiC
Solid state quantum emitters are among the most promising candidates for single photon generation in quantum technologies. However, they suffer from decoherence effects that limit their efficiency and indistinguishability. For instance, the radiation emitted in the zero phonon line (ZPL) of most color centers is on the order of a few percent (e.g., NV– centers in diamond, VSiVC in SiC), limiting the emission rate of single photons as well as the efficiency. At the same time, reliable interfacing with photons in an integrated manner still remains a challenge in both diamond and SiC technology. Here we develop photonic crystal cavities with Q factors in the order of 7100 in 3C SiC. We discuss how this high confinement cavity can significantly enhance the fraction of photons emitted in the ZPL and improve their characteristics. We study the requirements to place SiC color centers in the strong coupling condition and analyze the maximum attainable enhancement in the weak coupling regime. The robustness of the increased efficiency and improved indistinguishability can open the way to quantum technologies in the solid state.
2330-4022
Chatzopoulos, Ioannis
bc321d78-ab45-4ae0-93a5-ad90cd82fb1b
Martini, Francesco
394af6a7-dbcf-4d7b-9add-f7ed80bfe020
Cernansky, Robert
8ccb162e-f8ee-4209-a5aa-e9a79e80b919
Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec
Chatzopoulos, Ioannis
bc321d78-ab45-4ae0-93a5-ad90cd82fb1b
Martini, Francesco
394af6a7-dbcf-4d7b-9add-f7ed80bfe020
Cernansky, Robert
8ccb162e-f8ee-4209-a5aa-e9a79e80b919
Politi, Alberto
cf75c0a8-d34d-4cbe-b9d5-e408c0edeeec

Chatzopoulos, Ioannis, Martini, Francesco, Cernansky, Robert and Politi, Alberto (2019) High-Q/V photonic crystal cavities and QED analysis in 3C-SiC. ACS Photonics, 6 (8). (doi:10.1021/acsphotonics.8b01671).

Record type: Article

Abstract

Solid state quantum emitters are among the most promising candidates for single photon generation in quantum technologies. However, they suffer from decoherence effects that limit their efficiency and indistinguishability. For instance, the radiation emitted in the zero phonon line (ZPL) of most color centers is on the order of a few percent (e.g., NV– centers in diamond, VSiVC in SiC), limiting the emission rate of single photons as well as the efficiency. At the same time, reliable interfacing with photons in an integrated manner still remains a challenge in both diamond and SiC technology. Here we develop photonic crystal cavities with Q factors in the order of 7100 in 3C SiC. We discuss how this high confinement cavity can significantly enhance the fraction of photons emitted in the ZPL and improve their characteristics. We study the requirements to place SiC color centers in the strong coupling condition and analyze the maximum attainable enhancement in the weak coupling regime. The robustness of the increased efficiency and improved indistinguishability can open the way to quantum technologies in the solid state.

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Chatzopoulos-phc_SiC_cavity - Accepted Manuscript
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Accepted/In Press date: 8 July 2019
e-pub ahead of print date: 10 July 2019

Identifiers

Local EPrints ID: 432701
URI: http://eprints.soton.ac.uk/id/eprint/432701
ISSN: 2330-4022
PURE UUID: 1a935ff4-d266-4a9e-a6ad-2ecd6dca74bc
ORCID for Ioannis Chatzopoulos: ORCID iD orcid.org/0000-0001-8107-6530
ORCID for Alberto Politi: ORCID iD orcid.org/0000-0002-3668-9474

Catalogue record

Date deposited: 24 Jul 2019 16:30
Last modified: 07 Oct 2020 04:17

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