Optical simulation of black silicon surfaces using geometric randomisation and unit-cell based averaging
Optical simulation of black silicon surfaces using geometric randomisation and unit-cell based averaging
In this work, we present a method of simulating the reflectance spectra of black silicon surfaces using the finite element method. Outlined is the design and verification of a new set of algorithm-controlled geometries, rendering a vast array of different structural permutations, whilst measuring the spectral response of each individually. Our model is focussed on the variation of these geometries within the limits of certain ranged parameters for quantities such as nanowire height, radius, pitch, bend and bunching. Also explored is the variation of nanowire positioning within the simulation domain, leading to the more accurate depiction of non-uniform spacing between any given pair. Reflectance data was collated and averaged from all the random models to reliably determine the reflectance of an entire b-Si surface. The comparison between simulated results and their real equivalents offers the possibility of a simulation model versatile enough to predict the spectra of new and unorthodox designs.
Tyson, Jack James
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Rahman, Tasmiat
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Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
12 April 2019
Tyson, Jack James
1ace1d00-d4dd-48c7-aa05-61951e074e89
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Tyson, Jack James, Rahman, Tasmiat and Boden, Stuart
(2019)
Optical simulation of black silicon surfaces using geometric randomisation and unit-cell based averaging.
The 15th Photovoltaic Science, Applications and Technology Conference<br/>, University of Warwick, United Kingdom.
10 - 12 Apr 2019.
4 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
In this work, we present a method of simulating the reflectance spectra of black silicon surfaces using the finite element method. Outlined is the design and verification of a new set of algorithm-controlled geometries, rendering a vast array of different structural permutations, whilst measuring the spectral response of each individually. Our model is focussed on the variation of these geometries within the limits of certain ranged parameters for quantities such as nanowire height, radius, pitch, bend and bunching. Also explored is the variation of nanowire positioning within the simulation domain, leading to the more accurate depiction of non-uniform spacing between any given pair. Reflectance data was collated and averaged from all the random models to reliably determine the reflectance of an entire b-Si surface. The comparison between simulated results and their real equivalents offers the possibility of a simulation model versatile enough to predict the spectra of new and unorthodox designs.
Text
1904 Optical Simulation of Black Silicon
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Published date: 12 April 2019
Venue - Dates:
The 15th Photovoltaic Science, Applications and Technology Conference<br/>, University of Warwick, United Kingdom, 2019-04-10 - 2019-04-12
Identifiers
Local EPrints ID: 432941
URI: http://eprints.soton.ac.uk/id/eprint/432941
PURE UUID: 1f6c407b-3d13-4925-a04c-b4f70d9d8129
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Date deposited: 01 Aug 2019 16:30
Last modified: 13 Aug 2020 01:50
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Contributors
Author:
Jack James Tyson
Author:
Tasmiat Rahman
Author:
Stuart Boden
University divisions
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