Single electron memory effect using random telegraph signals at room temperature
Single electron memory effect using random telegraph signals at room temperature
We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimised the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well.
Random Telegraph Signals, Silicon, Nanowire, FET, Single electron transistor
1-11
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Hillier, Joseph, William
3621050b-74de-4fb7-b1ee-968965966336
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
9 October 2019
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Hillier, Joseph, William
3621050b-74de-4fb7-b1ee-968965966336
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Ibukuro, Kouta, Husain, Muhammad K, Hillier, Joseph, William, Li, Zuo, Liu, Fayong, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi
(2019)
Single electron memory effect using random telegraph signals at room temperature.
Frontiers in Physics, 7 (152), .
(doi:10.3389/fphy.2019.00152).
Abstract
We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimised the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well.
Text
Ibukuro19
- Version of Record
More information
In preparation date: 6 March 2019
Accepted/In Press date: 20 September 2019
Published date: 9 October 2019
Keywords:
Random Telegraph Signals, Silicon, Nanowire, FET, Single electron transistor
Identifiers
Local EPrints ID: 434463
URI: http://eprints.soton.ac.uk/id/eprint/434463
ISSN: 0429-7725
PURE UUID: b0762586-850a-43e9-afdd-02f73ac06482
Catalogue record
Date deposited: 24 Sep 2019 16:30
Last modified: 16 Mar 2024 04:12
Export record
Altmetrics
Contributors
Author:
Kouta Ibukuro
Author:
Muhammad K Husain
Author:
Joseph, William Hillier
Author:
Zuo Li
Author:
Fayong Liu
Author:
Isao Tomita
Author:
Yoshishige Tsuchiya
Author:
Harvey Rutt
Author:
Shinichi Saito
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics