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Single electron memory effect using random telegraph signals at room temperature

Single electron memory effect using random telegraph signals at room temperature
Single electron memory effect using random telegraph signals at room temperature
We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimised the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well.
Random Telegraph Signals, Silicon, Nanowire, FET, Single electron transistor
0429-7725
1-11
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Hillier, Joseph, William
3621050b-74de-4fb7-b1ee-968965966336
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Hillier, Joseph, William
3621050b-74de-4fb7-b1ee-968965966336
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Ibukuro, Kouta, Husain, Muhammad K, Hillier, Joseph, William, Li, Zuo, Liu, Fayong, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2019) Single electron memory effect using random telegraph signals at room temperature. Frontiers in Physics, 7 (152), 1-11. (doi:10.3389/fphy.2019.00152).

Record type: Article

Abstract

We show a manipulation of a single electron at room temperature by controlling Random Telegraph Signals (RTSs) by voltage pulses. Our silicon nanowire triple-gate transistor exhibited RTSs when potential barriers were electrically created by two of the three gates. From the statistics of the signals, we optimised the voltage pulse such that a single electron was intentionally captured in the potential well, and the retention time of approximately 10ms was observed in this memory operation. This study indicates that a single electron effect can be controllable in a form of RTSs at room temperature by electrically defining a potential well.

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In preparation date: 6 March 2019
Accepted/In Press date: 20 September 2019
Published date: 9 October 2019
Keywords: Random Telegraph Signals, Silicon, Nanowire, FET, Single electron transistor

Identifiers

Local EPrints ID: 434463
URI: https://eprints.soton.ac.uk/id/eprint/434463
ISSN: 0429-7725
PURE UUID: b0762586-850a-43e9-afdd-02f73ac06482
ORCID for Kouta Ibukuro: ORCID iD orcid.org/0000-0002-6546-8873
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 24 Sep 2019 16:30
Last modified: 11 Oct 2019 00:32

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Contributors

Author: Kouta Ibukuro ORCID iD
Author: Muhammad K Husain
Author: Joseph, William Hillier
Author: Zuo Li
Author: Fayong Liu ORCID iD
Author: Isao Tomita
Author: Yoshishige Tsuchiya
Author: Harvey Rutt
Author: Shinichi Saito ORCID iD

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