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Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes

Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes
Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes

Schottky characteristics of nanocrystalline graphite/p-Si junction were investigated using current-voltage measurements at various temperatures between 298 and 473 K. Using the thermionic emission theory, the extracted ideality factor reduces by 77% while Schottky barrier height increases by 46% with increasing temperature. The initial obtained value of Richardson constant, A∗ from this device was 7.92 × 10-10 Acm-2 K-2. This value is far smaller than the theoretical value of 32A cm-2 K-2 for p-Si which indicates inhomogeneity of a barrier height at the device interface. The Gaussian distribution plot was employed to explain the barrier height inhomogeneity, which gives the mean barrier height and standard deviation of 1.23 eV and 0.19 eV, respectively. By including the Gaussian distribution, the analysis of a modified Richardson plot gives a mean barrier height of 1.25 eV and a Richardson constant of 31.09 A cm-2 K-2, which are close to the theoretical values.

0021-4922
1-8
Nawawi, Azfar Abid
802408e1-a988-441e-aabc-11dfeccc0447
Sultan, Suhana Mohamed
f789d611-a667-4d61-82b8-3902158b29c2
Rahman, Shaharin Fadzli Abd
c69dceb8-4ec0-4d70-8ccc-9e2e386f43c8
Hui, Pu Suan
85b7afb5-199b-4094-8faa-1f693cc1b68e
Nawawi, Azfar Abid
802408e1-a988-441e-aabc-11dfeccc0447
Sultan, Suhana Mohamed
f789d611-a667-4d61-82b8-3902158b29c2
Rahman, Shaharin Fadzli Abd
c69dceb8-4ec0-4d70-8ccc-9e2e386f43c8
Hui, Pu Suan
85b7afb5-199b-4094-8faa-1f693cc1b68e

Nawawi, Azfar Abid, Sultan, Suhana Mohamed, Rahman, Shaharin Fadzli Abd and Hui, Pu Suan (2019) Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes. Japanese Journal of Applied Physics, 58 (6), 1-8. (doi:10.7567/1347-4065/ab1e37).

Record type: Article

Abstract

Schottky characteristics of nanocrystalline graphite/p-Si junction were investigated using current-voltage measurements at various temperatures between 298 and 473 K. Using the thermionic emission theory, the extracted ideality factor reduces by 77% while Schottky barrier height increases by 46% with increasing temperature. The initial obtained value of Richardson constant, A∗ from this device was 7.92 × 10-10 Acm-2 K-2. This value is far smaller than the theoretical value of 32A cm-2 K-2 for p-Si which indicates inhomogeneity of a barrier height at the device interface. The Gaussian distribution plot was employed to explain the barrier height inhomogeneity, which gives the mean barrier height and standard deviation of 1.23 eV and 0.19 eV, respectively. By including the Gaussian distribution, the analysis of a modified Richardson plot gives a mean barrier height of 1.25 eV and a Richardson constant of 31.09 A cm-2 K-2, which are close to the theoretical values.

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More information

Accepted/In Press date: 23 April 2019
e-pub ahead of print date: 22 May 2019

Identifiers

Local EPrints ID: 434486
URI: https://eprints.soton.ac.uk/id/eprint/434486
ISSN: 0021-4922
PURE UUID: 64c9bbc6-6531-4ee9-bbc6-d4ba7ac20a41

Catalogue record

Date deposited: 25 Sep 2019 16:30
Last modified: 25 Sep 2019 16:30

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