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A comprehensive study on the effects of gamma radiation on the physical properties of two-dimensional WS2 monolayer semiconductor

A comprehensive study on the effects of gamma radiation on the physical properties of two-dimensional WS2 monolayer semiconductor
A comprehensive study on the effects of gamma radiation on the physical properties of two-dimensional WS2 monolayer semiconductor
This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable Van der Waals epitaxial (VdWE) process on SiO2 coated Si substrate. We found that ionizing radiation (gamma ray) interacts strongly with two-dimensional WS2, which induces effectively p-doping in the samples. As the radiation dose increases, the p-doping concentration increases substantially. In addition, in the small radiation dose regime, the WS2 monolayers exhibit usual diamagnetic behavior. However, a remarkable ferromagnetic hysteresis emerges when the WS2 monolayer is irradiated with 400 Gys. It is attributed to the presence of irradiation-induced complex vacancies composed of one tungsten and a pair of its nearby sulfurs. Moreover, these results have shown that the detector based on the large scale monolayer VdWE-grown two-dimensional WS2 is an appealing candidate for sensing high-energy photon at small radiation doses.
259-267
Felix, Jorlandio Francisco
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da Silva, Arlon F
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da Silva, Sebastião William
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Qu, Fanyao
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Qiu, Bin
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Ren, Junfeng
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de Azevedo, Walter Mendes
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Henini, Mohamed
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Huang, Chung-Che
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Felix, Jorlandio Francisco
bb6e7ff3-b678-4d9d-b944-c7155ed4562c
da Silva, Arlon F
9e06817f-0dcc-4957-8b1c-a7cf498d0be1
da Silva, Sebastião William
d262ab1f-e3c3-47f9-9cd3-8a683e302de4
Qu, Fanyao
b2254001-8510-4bc8-a880-6108a28f0c0e
Qiu, Bin
4b1cc786-502e-47b5-ac8b-e057e9f82090
Ren, Junfeng
172f66fc-e76a-4bff-a0c1-2c8fcb60780e
de Azevedo, Walter Mendes
2ba5479f-1145-465b-b30e-e715a31dc215
Henini, Mohamed
2467152b-d2db-4260-ba9f-94fa521ff883
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106

Felix, Jorlandio Francisco, da Silva, Arlon F, da Silva, Sebastião William, Qu, Fanyao, Qiu, Bin, Ren, Junfeng, de Azevedo, Walter Mendes, Henini, Mohamed and Huang, Chung-Che (2020) A comprehensive study on the effects of gamma radiation on the physical properties of two-dimensional WS2 monolayer semiconductor. Nanoscale Horizons, 5, 259-267. (doi:10.1039/C9NH00414A).

Record type: Article

Abstract

This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable Van der Waals epitaxial (VdWE) process on SiO2 coated Si substrate. We found that ionizing radiation (gamma ray) interacts strongly with two-dimensional WS2, which induces effectively p-doping in the samples. As the radiation dose increases, the p-doping concentration increases substantially. In addition, in the small radiation dose regime, the WS2 monolayers exhibit usual diamagnetic behavior. However, a remarkable ferromagnetic hysteresis emerges when the WS2 monolayer is irradiated with 400 Gys. It is attributed to the presence of irradiation-induced complex vacancies composed of one tungsten and a pair of its nearby sulfurs. Moreover, these results have shown that the detector based on the large scale monolayer VdWE-grown two-dimensional WS2 is an appealing candidate for sensing high-energy photon at small radiation doses.

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c9nh00414a - Accepted Manuscript
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Accepted/In Press date: 1 October 2019
e-pub ahead of print date: 2 October 2019
Published date: February 2020

Identifiers

Local EPrints ID: 434603
URI: http://eprints.soton.ac.uk/id/eprint/434603
PURE UUID: 02f34c1b-2817-4a73-af20-856c909c305f
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463

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Date deposited: 03 Oct 2019 16:30
Last modified: 23 May 2020 00:29

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Contributors

Author: Jorlandio Francisco Felix
Author: Arlon F da Silva
Author: Sebastião William da Silva
Author: Fanyao Qu
Author: Bin Qiu
Author: Junfeng Ren
Author: Walter Mendes de Azevedo
Author: Mohamed Henini
Author: Chung-Che Huang ORCID iD

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