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3D-printing of high-K thiol-ene resins with 1 spiro-orthoesters as anti-shrinkage additive

3D-printing of high-K thiol-ene resins with 1 spiro-orthoesters as anti-shrinkage additive
3D-printing of high-K thiol-ene resins with 1 spiro-orthoesters as anti-shrinkage additive
Tri(ethylene glycol) divinyl ether and the spiro‐orthoester 2‐((allyloxy)methy)‐1,4,6‐trioxospiro[4.4]nonane can be formulated in different ratios and crosslinked by thiol‐ene reactions. The spiro‐orthoester is used as anti‐shrinkage additive, enabling shrinkage reduction of up to 39%. Addition of a radical photoinitiator for the thiol‐ene reaction and a cationic photoinitiator for the double ring‐opening of the spiro‐orthoester enables dual‐curing for application in 3D‐printing. The formulation free of the spiro‐orthoester shows gelation during the printing process and, correspondingly, low resolution. The formulations containing the spiro‐orthoester exhibit higher resolutions in the range of 50 µm. The resins containing mixtures of tri(ethylene glycol) divinyl ether and the spiro‐orthoester show permittivities as high as 104. The dielectric loss factor of the resins is in the range of 0.5–7.6, and the conductivity in the range of 1.3⋅10−11 to 2.0⋅10−11 S cm−1. These high‐κ materials can be 3D‐printed by digital light processing for the next generation of electronic materials.
Marx, Philipp
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Romano, Angelo
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Roppolo, Ignazio
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Chemelli, Angela
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Muhlbacher, Inge
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Kern, Wolfgang
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Chaudhary, Sunny
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Andritsch, Thomas
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Sangermano, Marco
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Wiesbrock, Frank
1fa6e83c-886e-4475-ac9e-dbde6d305060
Marx, Philipp
b15561cb-835e-4942-b3c6-a558f62696bc
Romano, Angelo
3a4103a4-41fa-42ce-9754-7d788629d07b
Roppolo, Ignazio
7535769e-98d6-4fda-bbdc-1244cc85f6c4
Chemelli, Angela
87c526d4-6d7b-41c2-8840-554cb4e4660d
Muhlbacher, Inge
f0517f78-a39b-408c-88f8-5f1130e572b7
Kern, Wolfgang
6ac63dd6-415b-4163-b9d2-72c40266f1b4
Chaudhary, Sunny
e9feb00c-4cc9-4935-ad3f-2ee457d0207e
Andritsch, Thomas
8681e640-e584-424e-a1f1-0d8b713de01c
Sangermano, Marco
b29f00f3-f858-4a16-9222-22b7f458b55a
Wiesbrock, Frank
1fa6e83c-886e-4475-ac9e-dbde6d305060

Marx, Philipp, Romano, Angelo, Roppolo, Ignazio, Chemelli, Angela, Muhlbacher, Inge, Kern, Wolfgang, Chaudhary, Sunny, Andritsch, Thomas, Sangermano, Marco and Wiesbrock, Frank (2019) 3D-printing of high-K thiol-ene resins with 1 spiro-orthoesters as anti-shrinkage additive. Macromolecular Materials and Engineering. (doi:10.1002/mame.201900515).

Record type: Article

Abstract

Tri(ethylene glycol) divinyl ether and the spiro‐orthoester 2‐((allyloxy)methy)‐1,4,6‐trioxospiro[4.4]nonane can be formulated in different ratios and crosslinked by thiol‐ene reactions. The spiro‐orthoester is used as anti‐shrinkage additive, enabling shrinkage reduction of up to 39%. Addition of a radical photoinitiator for the thiol‐ene reaction and a cationic photoinitiator for the double ring‐opening of the spiro‐orthoester enables dual‐curing for application in 3D‐printing. The formulation free of the spiro‐orthoester shows gelation during the printing process and, correspondingly, low resolution. The formulations containing the spiro‐orthoester exhibit higher resolutions in the range of 50 µm. The resins containing mixtures of tri(ethylene glycol) divinyl ether and the spiro‐orthoester show permittivities as high as 104. The dielectric loss factor of the resins is in the range of 0.5–7.6, and the conductivity in the range of 1.3⋅10−11 to 2.0⋅10−11 S cm−1. These high‐κ materials can be 3D‐printed by digital light processing for the next generation of electronic materials.

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Accepted/In Press date: September 2019
e-pub ahead of print date: 14 October 2019

Identifiers

Local EPrints ID: 434715
URI: https://eprints.soton.ac.uk/id/eprint/434715
PURE UUID: 8860de26-304f-432d-aa95-78500646a15e
ORCID for Thomas Andritsch: ORCID iD orcid.org/0000-0002-3462-022X

Catalogue record

Date deposited: 07 Oct 2019 16:30
Last modified: 05 Nov 2019 01:37

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Contributors

Author: Philipp Marx
Author: Angelo Romano
Author: Ignazio Roppolo
Author: Angela Chemelli
Author: Inge Muhlbacher
Author: Wolfgang Kern
Author: Sunny Chaudhary
Author: Thomas Andritsch ORCID iD
Author: Marco Sangermano
Author: Frank Wiesbrock

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