Silicon nitride photonics for the near-infrared

In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<350 ºC) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 µm wavelength range.

Silicon photonics, demultiplexing, nonlinear photonics, phase change materials, photonic crystals, silicon nitride

10.1109/JSTQE.2019.2934127

1077-260X

1-13

Domínguez Bucio, Thalia

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Lacava, Cosimo

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Clementi, Marco

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Faneca Ruedas, Joaquin

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Skandalos, Ilias

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Galli, Matteo

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Debnath, Kapil

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Baldycheva, Anna

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Petropoulos, Periklis

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Gardes, Frederic

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1 March 2020

Domínguez Bucio, Thalia

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Lacava, Cosimo

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Clementi, Marco

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Faneca Ruedas, Joaquin

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Skandalos, Ilias

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Galli, Matteo

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Debnath, Kapil

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Baldycheva, Anna

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Petropoulos, Periklis

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Gardes, Frederic

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Domínguez Bucio, Thalia, Lacava, Cosimo, Clementi, Marco, Faneca Ruedas, Joaquin, Skandalos, Ilias, Galli, Matteo, Debnath, Kapil, Baldycheva, Anna, Petropoulos, Periklis and Gardes, Frederic (2020) Silicon nitride photonics for the near-infrared. IEEE Journal of Selected Topics in Quantum Electronics, 26 (2), 1-13, [8200613]. (doi:10.1109/JSTQE.2019.2934127).

Record type: Article

Abstract

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Silicon Nitride Photonics for the Near-Infrared_V5 - Accepted Manuscript

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Accepted/In Press date: 6 August 2019

e-pub ahead of print date: 5 September 2019

Published date: 1 March 2020

Additional Information: Funding Information: Manuscript received June 4, 2019; revised August 5, 2019; accepted August 6, 2019. Date of publication September 5, 2019; date of current version September 26, 2019. This work was supported by the EU 2020 Project “COSMICC” and in part by the Engineering and Physical Sciences Research Council (EPSRC) under Grants “Electronic-Photonic Convergence” (EP/N03247/1), “Silicon Photonics for Future Systems” (EP/L00044X/1), “CORNERSTONE” (EP/L021129/1), and “Rockley Photonics and the University of Southampton: A Prosperity Partnership” (EP/R003076/1). (Corresponding author: Thalía Domínguez Bucio.) T. D. Bucio, C. Lacava, I. Skandalos, P. Petropoulos, and F. Gardes are with Optoelectronics Research Centre, University of Southampton, SO17 1BJ Southampton, U.K. (e-mail: t.dominguez_bucio@soton.ac.uk; c.lacava@soton. ac.uk; I.Skandalos@soton.ac.uk; pp@orc.soton.ac.uk; f.gardes@soton.ac.uk). Publisher Copyright: © 1995-2012 IEEE.

Keywords: Silicon photonics, demultiplexing, nonlinear photonics, phase change materials, photonic crystals, silicon nitride

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