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Silicon nitride photonics for the near-infrared

Silicon nitride photonics for the near-infrared
Silicon nitride photonics for the near-infrared
In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<350 ${^\circ}$ C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 µm wavelength range.
1077-260X
1-13
Domínguez Bucio, Thalia
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Lacava, Cosimo
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Clementi, Marco
54aa1831-c800-48c9-b574-5db815765a85
Faneca Ruedas, Joaquin
f275284c-8c6a-4128-b303-3715ced9471d
Skandalos, Ilias
8a38a06a-38fd-47fd-a469-1165fa7fe9ac
Galli, Matteo
72eb7b31-390d-4a79-bad5-2da07a886056
Debnath, Kapil
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Baldycheva, Anna
cd4d0080-e4a8-4684-94a1-6ebacf012b32
Petropoulos, Periklis
522b02cc-9f3f-468e-bca5-e9f58cc9cad7
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Lacava, Cosimo
a0a31a27-23ac-4a73-8bb4-2f02368fb8bd
Clementi, Marco
54aa1831-c800-48c9-b574-5db815765a85
Faneca Ruedas, Joaquin
f275284c-8c6a-4128-b303-3715ced9471d
Skandalos, Ilias
8a38a06a-38fd-47fd-a469-1165fa7fe9ac
Galli, Matteo
72eb7b31-390d-4a79-bad5-2da07a886056
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Baldycheva, Anna
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Petropoulos, Periklis
522b02cc-9f3f-468e-bca5-e9f58cc9cad7
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2

Domínguez Bucio, Thalia, Lacava, Cosimo, Clementi, Marco, Faneca Ruedas, Joaquin, Skandalos, Ilias, Galli, Matteo, Debnath, Kapil, Baldycheva, Anna, Petropoulos, Periklis and Gardes, Frederic (2020) Silicon nitride photonics for the near-infrared. IEEE Journal of Selected Topics in Quantum Electronics, 06 (2), 1-13. (doi:10.1109/JSTQE.2019.2934127).

Record type: Article

Abstract

In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<350 ${^\circ}$ C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 µm wavelength range.

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Silicon Nitride Photonics for the Near-Infrared_V5 - Accepted Manuscript
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Accepted/In Press date: 6 August 2019
e-pub ahead of print date: 5 September 2019
Published date: March 2020

Identifiers

Local EPrints ID: 434919
URI: https://eprints.soton.ac.uk/id/eprint/434919
ISSN: 1077-260X
PURE UUID: cd5eea9b-7c0a-466b-878c-bdeefab92128
ORCID for Thalia Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403
ORCID for Cosimo Lacava: ORCID iD orcid.org/0000-0002-9950-8642
ORCID for Periklis Petropoulos: ORCID iD orcid.org/0000-0002-1576-8034

Catalogue record

Date deposited: 16 Oct 2019 16:30
Last modified: 02 Nov 2019 01:38

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Contributors

Author: Cosimo Lacava ORCID iD
Author: Marco Clementi
Author: Joaquin Faneca Ruedas
Author: Ilias Skandalos
Author: Matteo Galli
Author: Kapil Debnath
Author: Anna Baldycheva
Author: Frederic Gardes

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