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Dataset for: Tuneable single electron characteristics through electrical stress in silicon transistors towards a quantum field programmable gate array

Dataset for: Tuneable single electron characteristics through electrical stress in silicon transistors towards a quantum field programmable gate array
Dataset for: Tuneable single electron characteristics through electrical stress in silicon transistors towards a quantum field programmable gate array
Data set for paper to be submitted: AUTHORS: Joseph William Hillier, Kouta Ibukuro, Shouyu Xie, Zuo Li, Fayong Liu, Muhammad Khaled Husain, Yoshishige Tsuchiya, Harvey Rutt and Shinichi Saito TITLE: Tunable single hole characteristics through electrical stress in silicon metal-oxide-semiconductor field-effect transistors JOURNAL: Journal of Applied Physics
University of Southampton
Hillier, Joseph, William
3621050b-74de-4fb7-b1ee-968965966336
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Xie, Shouyu
ad03ab6d-4f3f-4953-b1cd-fe3344aa6ff4
Li, Z.
b760ad9c-e89c-407f-bbdf-bf5f95496555
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad Khaled
db4ddb10-f59b-4965-8d0e-08a62f9ac0a6
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Hillier, Joseph, William
3621050b-74de-4fb7-b1ee-968965966336
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Xie, Shouyu
ad03ab6d-4f3f-4953-b1cd-fe3344aa6ff4
Li, Z.
b760ad9c-e89c-407f-bbdf-bf5f95496555
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad Khaled
db4ddb10-f59b-4965-8d0e-08a62f9ac0a6
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Hillier, Joseph, William (2019) Dataset for: Tuneable single electron characteristics through electrical stress in silicon transistors towards a quantum field programmable gate array. University of Southampton doi:10.5258/SOTON/D1122 [Dataset]

Record type: Dataset

Abstract

Data set for paper to be submitted: AUTHORS: Joseph William Hillier, Kouta Ibukuro, Shouyu Xie, Zuo Li, Fayong Liu, Muhammad Khaled Husain, Yoshishige Tsuchiya, Harvey Rutt and Shinichi Saito TITLE: Tunable single hole characteristics through electrical stress in silicon metal-oxide-semiconductor field-effect transistors JOURNAL: Journal of Applied Physics

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More information

Published date: 20 November 2019
Learn more about School of Electronics and Computer Science research Learn more about Smart Electronic Materials and Systems research Learn more about Electronics & Computer Science research Learn more about Sustainable Electronic Technologies research

Identifiers

Local EPrints ID: 435802
URI: http://eprints.soton.ac.uk/id/eprint/435802
DOI: doi:10.5258/SOTON/D1122
PURE UUID: 69325289-ea7b-4dfa-a550-d34af8d756b6
ORCID for Joseph, William Hillier: ORCID iD orcid.org/0000-0003-4418-0819
ORCID for Kouta Ibukuro: ORCID iD orcid.org/0000-0002-6546-8873
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 20 Nov 2019 17:32
Last modified: 11 May 2023 01:42

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Contributors

Creator: Joseph, William Hillier ORCID iD
Contributor: Kouta Ibukuro ORCID iD
Contributor: Shouyu Xie
Contributor: Z. Li
Contributor: Fayong Liu ORCID iD
Contributor: Muhammad Khaled Husain
Contributor: Yoshishige Tsuchiya
Contributor: Harvey Rutt
Contributor: Shinichi Saito ORCID iD

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